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公开(公告)号：US08992791B2
公开(公告)日：2015-03-31
申请号：US12569929
申请日：2009-09-30
IPC分类号： H01L21/02
CPC分类号： H01L21/02046 , H01L21/02052 , H01L21/02054
摘要： A silicon wafer surface other than a defect is oxidized by ozone to form a silicon oxide film. A hydrofluoric acid is sprayed and subsequently a cleaning gas is sprayed onto the surface of the silicon wafer.
摘要翻译： 除了缺陷之外的硅晶片表面被臭氧氧化以形成氧化硅膜。 喷射氢氟酸，随后将清洁气体喷涂到硅晶片的表面上。
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公开(公告)号：US20090286333A1
公开(公告)日：2009-11-19
申请号：US12465173
申请日：2009-05-13
申请人： Kazuaki Kozasa , Tomonori Kawasaki
发明人： Kazuaki Kozasa , Tomonori Kawasaki
IPC分类号： H01L21/66 , H01L21/306
CPC分类号： H01L22/12 , H01L21/31116 , H01L21/76243 , H01L21/76256 , H01L22/26
摘要： A method of etching a semiconductor wafer is provided. The method comprises the steps of: jetting a mixed gas including hydrogen fluoride and ozone onto a surface of a semiconductor wafer; monitoring the surface of the semiconductor wafer; analyzing the surface of the semiconductor wafer; and adjusting at least one of the hydrogen fluoride concentration and the ozone concentration in the mixed gas based on a result of the analysis.
摘要翻译： 提供了蚀刻半导体晶片的方法。 该方法包括以下步骤：将包含氟化氢和臭氧的混合气体喷射到半导体晶片的表面上; 监测半导体晶片的表面; 分析半导体晶片的表面; 并根据分析结果调整混合气体中的氟化氢浓度和臭氧浓度中的至少一个。
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3.发明申请Rough polishing method of semiconductor wafer and polishing apparatus of semiconductor wafer 有权半导体晶片的粗抛光方法和半导体晶片的抛光装置公开(公告)号：US20080081541A1
公开(公告)日：2008-04-03
申请号：US11906073
申请日：2007-09-28
CPC分类号： H01L21/02024 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer (W) using a polishing apparatus (1) includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit (4) and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit (5) and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit (6). The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table (2) in the first polishing step.
摘要翻译： 使用抛光装置（1）在半导体晶片（W）上进行镜面抛光之前进行粗抛光的粗抛光方法包括：使用由浆料供给部供给的含有胶体二氧化硅的浆料研磨半导体晶片的第一研磨工序 （4）和第二研磨步骤，用于通过混合从去离子水供给单元（5）供给的去离子水和由碱浓缩液供给单元（6）提供的碱浓缩液而提供的碱溶液来研磨半导体晶片。 基于第一研磨工序中的研磨台（2）的负载电流值，决定第二研磨工序中的碱溶液的pH值和研磨时间。
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公开(公告)号：US09305850B2
公开(公告)日：2016-04-05
申请号：US13586721
申请日：2012-08-15
申请人： Kazuaki Kozasa , Tomonori Kawasaki
发明人： Kazuaki Kozasa , Tomonori Kawasaki
IPC分类号： H01L21/306 , H01L21/76 , H01L21/66 , H01L21/311 , H01L21/762
CPC分类号： H01L22/12 , H01L21/31116 , H01L21/76243 , H01L21/76256 , H01L22/26
摘要： A method and an apparatus of etching a semiconductor wafer are provided. The etching apparatus of a semiconductor wafer having a marker inside includes: a monitoring device capable of monitoring a surface of the semiconductor wafer so as to detect the marker; a nozzle capable of jetting a mixed gas that contains hydrogen fluoride and ozone onto the surface of the semiconductor wafer; a regulator capable of adjusting at least one of hydrogen fluoride concentration and ozone concentration in the mixed gas; and a controller capable of determining whether the marker is detected by the monitoring device and terminating the etching process.
摘要翻译： 提供蚀刻半导体晶片的方法和装置。 具有标记的半导体晶片的蚀刻装置包括：能够监视半导体晶片的表面以便检测标记的监视装置; 喷嘴，其能够将含有氟化氢和臭氧的混合气体喷射到所述半导体晶片的表面上; 能够调节混合气体中的氟化氢浓度和臭氧浓度中的至少一种的调节器; 以及控制器，其能够确定所述监视装置是否检测到所述标记，并且终止所述蚀刻处理。
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公开(公告)号：US20120305187A1
公开(公告)日：2012-12-06
申请号：US13586721
申请日：2012-08-15
申请人： Kazuaki Kozasa , Tomonori Kawasaki
发明人： Kazuaki Kozasa , Tomonori Kawasaki
IPC分类号： H01L21/306
CPC分类号： H01L22/12 , H01L21/31116 , H01L21/76243 , H01L21/76256 , H01L22/26
摘要： A method and an apparatus of etching a semiconductor wafer are provided. The etching apparatus of a semiconductor wafer having a marker inside includes: a monitoring device capable of monitoring a surface of the semiconductor wafer so as to detect the marker; a nozzle capable of jetting a mixed gas that contains hydrogen fluoride and ozone onto the surface of the semiconductor wafer; a regulator capable of adjusting at least one of hydrogen fluoride concentration and ozone concentration in the mixed gas; and a controller capable of determining whether the marker is detected by the monitoring device and terminating the etching process.
摘要翻译： 提供蚀刻半导体晶片的方法和装置。 具有标记的半导体晶片的蚀刻装置包括：能够监视半导体晶片的表面以便检测标记的监视装置; 喷嘴，其能够将含有氟化氢和臭氧的混合气体喷射到所述半导体晶片的表面上; 能够调节混合气体中的氟化氢浓度和臭氧浓度中的至少一种的调节器; 以及控制器，其能够确定所述监视装置是否检测到所述标记，并终止所述蚀刻处理。
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6.发明授权Rough polishing method of semiconductor wafer and polishing apparatus of semiconductor wafer 有权半导体晶片的粗抛光方法和半导体晶片的抛光装置公开(公告)号：US07666063B2
公开(公告)日：2010-02-23
申请号：US12250356
申请日：2008-10-13
IPC分类号： B24B49/00
CPC分类号： H01L21/02024 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer using a polishing apparatus includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit. The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table in the first polishing step.
摘要翻译： 使用抛光装置在半导体晶片上进行镜面抛光之前进行粗抛光的粗抛光方法包括：使用由浆料供给部供给的含有胶体二氧化硅的浆料研磨半导体晶片的第一研磨工序，以及第二研磨工序 使用由去离子水供给单元供给的去离子水和由碱浓缩液供给单元供给的碱浓缩液混合而提供的碱溶液研磨半导体晶片。 基于第一研磨工序中的研磨台的载荷电流值，确定第二研磨工序中的碱溶液的pH值和研磨时间。
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公开(公告)号：US08273260B2
公开(公告)日：2012-09-25
申请号：US12465173
申请日：2009-05-13
申请人： Kazuaki Kozasa , Tomonori Kawasaki
发明人： Kazuaki Kozasa , Tomonori Kawasaki
IPC分类号： B44C1/22
CPC分类号： H01L22/12 , H01L21/31116 , H01L21/76243 , H01L21/76256 , H01L22/26
摘要： A method of etching a semiconductor wafer is provided. The method comprises the steps of: jetting a mixed gas including hydrogen fluoride and ozone onto a surface of a semiconductor wafer; monitoring the surface of the semiconductor wafer; analyzing the surface of the semiconductor wafer; and adjusting at least one of the hydrogen fluoride concentration and the ozone concentration in the mixed gas based on a result of the analysis.
摘要翻译： 提供了蚀刻半导体晶片的方法。 该方法包括以下步骤：将包含氟化氢和臭氧的混合气体喷射到半导体晶片的表面上; 监测半导体晶片的表面; 分析半导体晶片的表面; 并根据分析结果调整混合气体中的氟化氢浓度和臭氧浓度中的至少一个。
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8.发明授权Rough polishing method of semiconductor wafer and polishing apparatus of semiconductor wafer 有权半导体晶片的粗抛光方法和半导体晶片的抛光装置公开(公告)号：US07540800B2
公开(公告)日：2009-06-02
申请号：US11906073
申请日：2007-09-28
IPC分类号： B24B49/00
CPC分类号： H01L21/02024 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer (W) using a polishing apparatus (1) includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit (4) and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit (5) and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit (6). The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table (2) in the first polishing step.
摘要翻译： 使用抛光装置（1）在半导体晶片（W）上进行镜面抛光之前进行粗抛光的粗抛光方法包括：使用由浆料供给部供给的含有胶体二氧化硅的浆料研磨半导体晶片的第一研磨工序 （4）和第二研磨步骤，用于通过混合从去离子水供给单元（5）供给的去离子水和由碱浓缩液供给单元（6）提供的碱浓缩液而提供的碱溶液来研磨半导体晶片。 基于第一研磨工序中的研磨台（2）的负载电流值，决定第二研磨工序中的碱溶液的pH值和研磨时间。
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9.发明授权Manufacturing method of epitaxial silicon wafer and substrate cleaning apparatus 有权外延硅晶片和基板清洗装置的制造方法公开(公告)号：US08696809B2
公开(公告)日：2014-04-15
申请号：US12137754
申请日：2008-06-12
申请人： Kazuaki Kozasa , Kosuke Miyoshi
发明人： Kazuaki Kozasa , Kosuke Miyoshi
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B30/04 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , C30B35/00
CPC分类号： C30B33/12 , C30B15/00 , C30B29/06 , C30B33/02 , H01L21/02049 , H01L21/02381 , H01L21/02532 , H01L21/02658
摘要： A manufacturing method of an epitaxial silicon wafer is provided. The epitaxial silicon wafer includes: a substrate cut out from a silicon monocrystal that has been manufactured, doped with nitrogen and pulled up in accordance with Czochralski method; and an epitaxial layer formed on the substrate. The manufacturing method includes: cleaning a surface of the substrate with fluorinated acid by spraying onto the surface of the substrate fluorinated acid vaporized by a bubbling tank of a substrate cleaning apparatus; and forming an epitaxial layer on the cleaned surface of the substrate.
摘要翻译： 提供了外延硅晶片的制造方法。 外延硅晶片包括：从已经制造的掺杂有氮并根据切克劳斯基法提取的硅单晶切出的衬底; 以及在该基板上形成的外延层。 制造方法包括：通过喷涂在基板清洗装置的发泡罐所蒸发的基板氟化酸的表面上，用氟化酸清洗基板的表面; 以及在所述基板的所述被清洁表面上形成外延层。
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公开(公告)号：US20070059935A1
公开(公告)日：2007-03-15
申请号：US11512837
申请日：2006-08-30
CPC分类号： H01L21/02024 , B24B37/044 , B24B55/12 , B24B57/04 , C09G1/02 , Y02P70/179
摘要： A polishing method includes a slurry adjusting step for adjusting a polishing slurry containing silica particles so that the number of silica particles having a composition ratio of Si/O of 50-60 wt %/40-50 wt %, a modulus of elasticity of 1.4×1010 Pa or higher and a particle size of 1 μm or larger is 3000 pcs/ml or less. A semiconductor wafer is polished using the polishing slurry adjusted in the slurry adjusting step.
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