Data generation method for semiconductor device, and electron beam exposure system
    1.
    发明授权
    Data generation method for semiconductor device, and electron beam exposure system 有权
    半导体器件的数据生成方法和电子束曝光系统

    公开(公告)号:US08429573B2

    公开(公告)日:2013-04-23

    申请号:US12350525

    申请日:2009-01-08

    IPC分类号: G06F17/50 G03F1/00 G03F7/20

    摘要: A method includes: generating electron beam exposure data, used for electron beam exposure, from design data of a semiconductor device; extracting differential information indicating a difference in shape between an electron beam exposure pattern formed on a substrate through electron beam exposure on the basis of the electron beam exposure data and a photoexposure pattern formed on the substrate through photoexposure on the basis of the design data of the semiconductor device; determining whether the size of the difference in shape between the electron beam exposure pattern and the photoexposure pattern falls within a predetermined reference value; acquiring shape changed exposure data by changing the shape of the pattern of the electron beam exposure data in accordance with the differential information and updating the electron beam exposure data; and repeating the differential extraction, the determination and the updating when the size of the difference falls outside the predetermined reference value.

    摘要翻译: 一种方法包括:从半导体器件的设计数据产生用于电子束曝光的电子束曝光数据; 基于电子束曝光数据,通过电子束曝光在基板上形成的电子束曝光图案和通过光曝光形成在基板上的光曝光图案之间的差异信息提取差异信息,基于 半导体器件; 确定电子束曝光图案和光曝光图案之间的形状差异的大小是否在预定的参考值内; 通过根据差分信息改变电子束曝光数据的图案的形状并更新电子束曝光数据来获取形状改变的曝光数据; 并且当差值的大小落在预定参考值之外时重复差分提取,确定和更新。

    Preparing data for hybrid exposure using both electron beam exposure and reticle exposure in lithographic process
    2.
    发明授权
    Preparing data for hybrid exposure using both electron beam exposure and reticle exposure in lithographic process 有权
    在光刻过程中使用电子束曝光和掩模版曝光准备数据进行混合曝光

    公开(公告)号:US08141009B2

    公开(公告)日:2012-03-20

    申请号:US12398664

    申请日:2009-03-05

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36 G03F1/68

    摘要: A method for preparing data for exposure includes forming a first plurality of rectangular patterns from a reticle preparing rule; lining an object pattern for performing reticle exposure with the first rectangular patterns, and extracting a second plurality of rectangular patterns, disposed in an N×N matrix, from the first plurality of rectangular patterns in the object pattern; and performing a violation detecting treatment and a correcting treatment of the pattern width and the pattern distance of the reticle exposure pattern on the basis of the distance between the second plurality of rectangular patterns.

    摘要翻译: 一种用于制备用于曝光的数据的方法包括:从掩模版准备规则形成第一多个矩形图案; 利用所述第一矩形图案衬里进行掩模版曝光的物体图案,并从所述物体图案中的所述第一多个矩形图案提取以N×N矩阵设置的第二多个矩形图案; 并且基于第二多个矩形图案之间的距离执行违反检测处理和对掩模版曝光图案的图案宽度和图案距离的校正处理。

    METHOD FOR PREPARING DATA FOR EXPOSURE AND METHOD FOR MANUFACTURING PHOTO MASK
    3.
    发明申请
    METHOD FOR PREPARING DATA FOR EXPOSURE AND METHOD FOR MANUFACTURING PHOTO MASK 有权
    用于制备曝光数据的方法和制造照相胶片的方法

    公开(公告)号:US20090239160A1

    公开(公告)日:2009-09-24

    申请号:US12398664

    申请日:2009-03-05

    IPC分类号: G03F1/00 G03C5/00

    CPC分类号: G03F1/36 G03F1/68

    摘要: A method for preparing data for exposure includes forming a first plurality of rectangular patterns from a reticle preparing rule; lining an object pattern for performing reticle exposure with the first rectangular patterns, and extracting a second plurality of rectangular patterns, disposed in an N×N matrix, from the first plurality of rectangular patterns in the object pattern; and performing a violation detecting treatment and a correcting treatment of the pattern width and the pattern distance of the reticle exposure pattern on the basis of the distance between the second plurality of rectangular patterns.

    摘要翻译: 准备用于曝光的数据的方法包括从掩模版准备规则形成第一多个矩形图案; 利用所述第一矩形图案衬里进行掩模版曝光的物体图案,并从所述物体图案中的所述第一多个矩形图案提取设置在N×N矩阵中的第二多个矩形图案; 并且基于第二多个矩形图案之间的距离执行违反检测处理和对掩模版曝光图案的图案宽度和图案距离的校正处理。

    Exposure data generator and method thereof
    4.
    发明授权
    Exposure data generator and method thereof 有权
    曝光数据发生器及其方法

    公开(公告)号:US07500219B2

    公开(公告)日:2009-03-03

    申请号:US11237658

    申请日:2005-09-29

    IPC分类号: G06F17/50

    摘要: A plurality of patterns placed within an target region are classified by their placement positions, a pattern adjacent to each side of each pattern is searched for by using the classification results, and adjacent pattern information is obtained. Next, a back-scattering intensity at an evaluation point on a pattern is calculated, a movement quantity of the side is calculated so that the sum of a forward-scattering intensity and the back-scattering intensity at the evaluation point becomes a reference exposure intensity by using the adjacent pattern information and the back-scattering intensity, and the pattern is then corrected.

    摘要翻译: 通过它们的放置位置对放置在目标区域内的多个图案进行分类,通过使用分类结果搜索与每个图案的每一侧相邻的图案,并且获得相邻的图案信息。 接下来,计算图案的评价点的背散射强度,计算出侧面的移动量,使得评价点的前向散射强度与背散射强度的和成为基准曝光强度 通过使用相邻图案信息和背散射强度,然后校正图案。

    Exposure data generator and method thereof
    5.
    发明授权
    Exposure data generator and method thereof 有权
    曝光数据发生器及其方法

    公开(公告)号:US07861210B2

    公开(公告)日:2010-12-28

    申请号:US12320124

    申请日:2009-01-16

    IPC分类号: G06F17/50

    摘要: An exposure data generator for generating exposure data representing graphical information of a pattern to be exposed and a computer-readable recording medium are provided. The generator includes a storage device for storing pre-correction exposure data which include information on positions and sizes of patterns placed within an target region and a search device for classifying the patterns according to placement positions within the target region, searching for a pattern which is another pattern by using the classified patterns, and storing information on the patterns. The generator also includes a back-scattering intensity calculation device for calculating a back-scattering intensity from at an evaluation point on the pattern. The generator also includes a movement quantity calculation device for calculating a movement quantity of a side of a pattern.

    摘要翻译: 一种曝光数据发生器,用于产生表示要曝光的图案的图形信息的曝光数据和计算机可读记录介质。 发生器包括用于存储预校正曝光数据的存储装置,其包括关于放置在目标区域内的图案的位置和尺寸的信息,以及用于根据目标区域内的放置位置对图案进行分类的搜索装置, 通过使用分类模式的另一模式,并且存储关于模式的信息。 该发生器还包括用于从图案上的评估点计算反向散射强度的背散射强度计算装置。 发电机还包括用于计算图案的一侧的移动量的移动量计算装置。

    Exposure data generator and method thereof
    6.
    发明申请
    Exposure data generator and method thereof 有权
    曝光数据发生器及其方法

    公开(公告)号:US20090144693A1

    公开(公告)日:2009-06-04

    申请号:US12320124

    申请日:2009-01-16

    IPC分类号: G06F17/50

    摘要: An exposure data generator for generating exposure data representing graphical information of a pattern to be exposed and a computer-readable recording medium are provided. The generator includes a storage device for storing pre-correction exposure data which include information on positions and sizes of patterns placed within an target region and a search device for classifying the patterns according to placement positions within the target region, searching for a pattern which is another pattern by using the classified patterns, and storing information on the patterns. The generator also includes a back-scattering intensity calculation device for calculating a back-scattering intensity from at an evaluation point on the pattern. The generator also includes a movement quantity calculation device for calculating a movement quantity of a side of a pattern.

    摘要翻译: 一种曝光数据发生器,用于产生表示要曝光的图案的图形信息的曝光数据和计算机可读记录介质。 发生器包括用于存储预校正曝光数据的存储装置,其包括关于放置在目标区域内的图案的位置和尺寸的信息,以及用于根据目标区域内的放置位置对图案进行分类的搜索装置, 通过使用分类模式的另一模式,并且存储关于模式的信息。 该发生器还包括用于从图案上的评估点计算反向散射强度的背散射强度计算装置。 发电机还包括用于计算图案的一侧的移动量的移动量计算装置。

    DATA GENERATION METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRON BEAM EXPOSURE SYSTEM
    8.
    发明申请
    DATA GENERATION METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRON BEAM EXPOSURE SYSTEM 有权
    用于半导体器件的数据生成方法和电子束曝光系统

    公开(公告)号:US20090187878A1

    公开(公告)日:2009-07-23

    申请号:US12350525

    申请日:2009-01-08

    IPC分类号: G06F17/50

    摘要: A method includes: generating electron beam exposure data, used for electron beam exposure, from design data of a semiconductor device; extracting differential information indicating a difference in shape between an electron beam exposure pattern formed on a substrate through electron beam exposure on the basis of the electron beam exposure data and a photoexposure pattern formed on the substrate through photoexposure on the basis of the design data of the semiconductor device; determining whether the size of the difference in shape between the electron beam exposure pattern and the photoexposure pattern falls within a predetermined reference value; acquiring shape changed exposure data by changing the shape of the pattern of the electron beam exposure data in accordance with the differential information and updating the electron beam exposure data; and repeating the differential extraction, the determination and the updating when the size of the difference falls outside the predetermined reference value.

    摘要翻译: 一种方法包括:从半导体器件的设计数据产生用于电子束曝光的电子束曝光数据; 基于电子束曝光数据,通过电子束曝光在基板上形成的电子束曝光图案和通过光曝光形成在基板上的光曝光图案之间的差异信息提取差异信息,基于 半导体器件; 确定电子束曝光图案和光曝光图案之间的形状差异的大小是否在预定的参考值内; 通过根据差分信息改变电子束曝光数据的图案的形状并更新电子束曝光数据来获取形状改变的曝光数据; 并且当差值的大小落在预定参考值之外时重复差分提取,确定和更新。

    Method for generating backscattering intensity on the basis of lower layer structure in charged particle beam exposure, and method for fabricating semiconductor device utilizing this method
    9.
    发明授权
    Method for generating backscattering intensity on the basis of lower layer structure in charged particle beam exposure, and method for fabricating semiconductor device utilizing this method 有权
    基于带电粒子束曝光中的下层结构生成反向散射强度的方法以及利用该方法制造半导体器件的方法

    公开(公告)号:US07205078B2

    公开(公告)日:2007-04-17

    申请号:US10853760

    申请日:2004-05-26

    IPC分类号: G03F9/00 H01J37/302

    摘要: A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nth layer from the resist layer among the plural layers, there is provided, for each of the substances in the nth layer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nth layer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nth layer; and a scatter distribution in which the charged particles are scattered within the nth layer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.

    摘要翻译: 当将带电粒子束照射到形成在多层的抗蚀剂层上时,产生反向散射强度的方法,其中带电粒子背面散射到抗蚀剂层,每个层包含一种物质或多种物质的图案。 对于多层中的抗蚀剂层的第n层,对于第n层的每个物质,设置反射系数rn,其对应于 具有由第n层反射的粒子数; 传输系数tn,其对应于由第n层发送的粒子数; 以及散射分布,其中带电粒子在第n层中散射。 生成方法包括通过使用反射系数rn,透射系数tn和散射分布来产生后向散射强度的第一步骤。

    Charged particle beam exposure method
    10.
    发明授权
    Charged particle beam exposure method 有权
    带电粒子束曝光方法

    公开(公告)号:US06544700B2

    公开(公告)日:2003-04-08

    申请号:US09809113

    申请日:2001-03-16

    申请人: Kozo Ogino

    发明人: Kozo Ogino

    IPC分类号: G03C500

    摘要: The invention is a charged particle beam exposure method, wherein exposure data having exposure pattern data is generated from pattern data, and a material is exposed accoring with the exposure data; comprising the steps of: (a) generating plural correction areas with respect to the patterns; (b) dividing a long and narrow pattern of the pattern data into a plurality of patterns; (c) determining a pattern area density within the correction areas, and revising the pattern density of the correction area according with surrounding patterns; (d) determining a main quantity of exposure for each divided pattern according with the highest corrected pattern density; (e) generating supplementary exposure patterns in the correction areas within the divided patterns with a shortage of exposure energy in the case of the main quantity of exposure. An optimum main quantity of exposure is determined for each divided pattern to reduce the number of supplementary exposure patterns.

    摘要翻译: 本发明是一种带电粒子束曝光方法,其中具有曝光图案数据的曝光数据是从图案数据生成的,并且根据曝光数据曝光材料; 包括以下步骤:(a)相对于图案产生多个校正区域; (b)将所述图案数据的长而窄的图案划分成多个图案; (c)确定校正区域内的图案区域密度,并根据周围图案修正校正区域的图案密度; (d)根据最高校正图案密度确定每个分割图案的主要曝光量; (e)在主要暴露量的情况下,在分割图案内的校正区域中产生补充曝光图案,其中暴露能量不足。 为每个划分的图案确定最佳的主要曝光量以减少补充曝光图案的数量。