公开(公告)号：US20050074927A1

公开(公告)日：2005-04-07

申请号：US10680509

申请日：2003-10-07

申请人： Kuang Hsieh ,  Keh-Yung Cheng ,  Kuo-Lih Chang ,  John Epple ,  Gregory Pickrell

发明人： Kuang Hsieh ,  Keh-Yung Cheng ,  Kuo-Lih Chang ,  John Epple ,  Gregory Pickrell

IPC分类号： H01L21/18 ,  H01L21/20 ,  H01L21/203 ,  H01L21/324 ,  H01L33/00 ,  H01L21/335

CPC分类号： H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/187

摘要： Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth, different substrates containing the low temperature grown material were pressed together in a pressure jig before being annealed. The annealing temperatures ranged from about 300° C. to 800° C. for annealing times between 30 minutes and 10 hours, depending on the bonding materials. The structures remained pressed together throughout the course of the annealing. Strong bonds were obtained for bonding layers between different substrates that were as thin as 3 nm and as thick as 600 nm. The bonds were ohmic with a relatively small resistance, optically transparent, and independent of the orientation of the underlying structures.

摘要翻译： 包括（Ga，As），（Al，As），（In，As），（Ga，N）和（Ga，P）材料的非晶和多晶III-V半导体在低温下生长在半导体衬底上。 生长后，将含有低温生长材料的不同基材在退火之前在压力夹具中压在一起。 取决于粘合材料，退火温度范围为约300℃至800℃，退火时间为30分钟至10小时。 在整个退火过程中，结构保持压在一起。 获得了很强的键，用于在不同基底之间的结合层，其厚度为3nm，厚度为600nm。 这些键是欧姆的，具有相对小的电阻，光学透明并且独立于下面的结构的取向。