公开(公告)号：US06531374B2

公开(公告)日：2003-03-11

申请号：US09927958

申请日：2001-08-10

申请人： Kun-I Lee ,  Tai-Yuan Wu ,  Ren-Jyh Leu ,  Hung-Chih Chen

发明人： Kun-I Lee ,  Tai-Yuan Wu ,  Ren-Jyh Leu ,  Hung-Chih Chen

IPC分类号： H01L2176

CPC分类号： C30B29/06 ,  C30B25/02 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Correction of overlay shift of an epitaxial silicon layer deposited on a semiconductor wafer, and of post-epitaxial silicon layers subsequently deposited, is disclosed. When an epitaxial silicon layer of a given thickness is deposited, the zero mark coordinates for the deposition are shifted relative to alignment marks on the wafer by a distance based on the thickness of the layer. The distance is preferably proportional to the thickness of the epi layer. This prevents overlay shift of the epi layer. For post-epitaxial silicon layers subsequently deposited, preferably except for the first post-epi layer, a clear out process is initially performed to maintain the alignment marks on the semiconductor wafer. In this way, overlay shift, or misalignment, of the post-epi layers is also prevented.

摘要翻译： 公开了沉积在半导体晶片上的外延硅层和随后沉积的后外延硅层的覆盖偏移的校正。 当沉积给定厚度的外延硅层时，用于沉积的零标记坐标相对于晶片上的对准标记基于层的厚度移动一定距离。 距离优选与外延层的厚度成比例。 这防止了外延层的覆盖移位。 对于随后沉积的后外延硅层，优选除了第一后外延层之外，最初执行清除工艺以保持半导体晶片上的对准标记。 这样就可以防止后外延层的覆盖偏移或未对准。

公开(公告)号：US06652912B2

公开(公告)日：2003-11-25

申请号：US09928045

申请日：2001-08-10

申请人： Ren-Jyh Leu ,  Hung-Chih Chen ,  Kun I Lee ,  Bao Ru Young

发明人： Ren-Jyh Leu ,  Hung-Chih Chen ,  Kun I Lee ,  Bao Ru Young

IPC分类号： B05D102

CPC分类号： H01L21/6715

摘要： This invention discloses a novel design to obtain a good coating uniformity and to reduce the volume of viscous materials when coating by spraying the viscous material on the wafer during the first time period at a first predetermined pressures; spraying the viscous material on the wafer at a second predetermined pressure in response to the end of the first time period, the second predetermined pressure being lower than the first predetermined pressure; and spraying the viscous material on the wafer during a second time period at a time-varying pressure, the time-varying pressure being increased from the second predetermined pressure to a third predetermined pressure during the second time period.

公开(公告)号：US06252670B1

公开(公告)日：2001-06-26

申请号：US09429672

申请日：1999-10-29

申请人： Han-Ming Sheng ,  Ren-Jyh Leu

发明人： Han-Ming Sheng ,  Ren-Jyh Leu

IPC分类号： G01B902

CPC分类号： G01B11/0625

摘要： A method is described for determining more accurate Cauchy coefficients for a constant-angle reflection-interference spectrometer (CARIS). This allows photoresist thicknesses for product wafers to be measured more accurately. The method for determining the Cauchy coefficients consists of coating monitor wafers with photoresist layers having various thicknesses formed by varying the spin speed during photoresist coating. The photoresist layers are then patterned using monochromatic radiation through a mask and developing photoresist. The monochromatic radiation has a dose sufficient to just clear the photoresist layers from the surface of the wafers during development. The linewidths of the photoresist are measured and plotted as a function of photoresist thickness to generate a critical dimension (CD) swing curve having an essentially sinusoidal shape that results from interference between the transmitted and reflected monochromatic radiation in the photoresist. The monitor wafer for a predetermined minimum in the CD swing curve is used to calculate more precisely the Cauchy coefficients for the refractive index for the photoresist. The refractive index as a function of frequency (Cauchy equation) is used is used with CARIS to measure photoresist thickness more accurately for product wafers.

摘要翻译： 描述了一种用于确定恒定角度反射干涉光谱仪（CARIS）的更准确的柯西系数的方法。 这样可以更精确地测量产品晶片的光致抗蚀剂厚度。 用于确定柯西系数的方法包括具有通过改变光致抗蚀剂涂覆期间的旋转速度形成的具有不同厚度的光致抗蚀剂层的涂覆监测晶片。 然后使用单色辐射通过掩模和显影光致抗蚀剂来图案化光致抗蚀剂层。 单色辐射具有足以在显影期间从晶片表面清除光致抗蚀剂层的剂量。 测量光致抗蚀剂的线宽并作为光致抗蚀剂厚度的函数绘制，以产生由光致抗蚀剂中的透射和反射单色辐射之间的干涉产生的基本正弦形状的临界尺寸（CD）摆动曲线。 使用CD摆动曲线中预定最小值的显示器晶片来更精确地计算光致抗蚀剂的折射率的柯西系数。 使用折射率作为频率的函数（Cauchy方程），与CARIS一起使用以更精确地测量产品晶片的光致抗蚀剂厚度。