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公开(公告)号:US20110086504A1
公开(公告)日:2011-04-14
申请号:US12879371
申请日:2010-09-10
申请人: Kuo Bin HUANG , Hsin-Chien LU , Ryan Chia-Jen CHEN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
发明人: Kuo Bin HUANG , Hsin-Chien LU , Ryan Chia-Jen CHEN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
IPC分类号: H01L21/3205 , H01L21/302
CPC分类号: H01L21/28238 , H01L21/02071 , H01L21/823842 , H01L21/823857
摘要: A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.
摘要翻译: 提供一种用于形成集成电路的方法。 该方法包括在衬底上形成栅极电介质结构。 形成与该栅电介质结构接触的含钛牺牲层。 基本上除去了整个含钛牺牲层。
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公开(公告)号:US20120086075A1
公开(公告)日:2012-04-12
申请号:US13327992
申请日:2011-12-16
申请人: Kuo Bin HUANG , Ssu-Yi LI , Ryan Chia-Jen CHEN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
发明人: Kuo Bin HUANG , Ssu-Yi LI , Ryan Chia-Jen CHEN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
IPC分类号: H01L27/088
CPC分类号: H01L21/823842 , H01L21/28079 , H01L21/28088 , H01L21/28247 , H01L29/4958 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要: A semiconductor structure with a metal gate structure includes a first type field-effect transistor having a first gate including: a high k dielectric material on a substrate, a first metal layer on the high k dielectric material layer and having a first work function, and a first aluminum layer on the first metal layer. The first aluminum layer includes an interfacial layer including aluminum, nitrogen and oxygen. The device also includes a second type field-effect transistor having a second gate including: the high k dielectric material on the substrate, a second metal layer on the high k dielectric material layer and having a second work function different from the first work function, and a second aluminum layer on the second metal layer.
摘要翻译: 具有金属栅极结构的半导体结构包括具有第一栅极的第一型场效应晶体管,包括:基板上的高k电介质材料,高k电介质材料层上的第一金属层,具有第一功函数,以及 在第一金属层上的第一铝层。 第一铝层包括包含铝,氮和氧的界面层。 该器件还包括具有第二栅极的第二类场效应晶体管,其包括:衬底上的高k电介质材料,高k电介质材料层上的第二金属层,具有不同于第一功函数的第二功函数, 和在第二金属层上的第二铝层。
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公开(公告)号:US20130267099A1
公开(公告)日:2013-10-10
申请号:US13442040
申请日:2012-04-09
申请人: Weibo YU , Kuo Bin HUANG , Chao-Cheng CHEN , Syun-Ming JANG
发明人: Weibo YU , Kuo Bin HUANG , Chao-Cheng CHEN , Syun-Ming JANG
IPC分类号: H01L21/306
CPC分类号: H01L21/6708 , H01L21/30608 , H01L21/31111 , H01L21/67109 , H01L22/12 , H01L22/20
摘要: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.
摘要翻译: 用于将液体蚀刻剂分配到晶片上的方法和设备使用扫描分配喷嘴将液体蚀刻剂分配到晶片上,同时根据分配喷嘴在晶片上的径向位置实时控制蚀刻剂的分配温度。 控制蚀刻剂的分配温度以提高蚀刻剂的有效性,从而补偿晶片中较低的蚀刻速率区域。
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