公开(公告)号：US20110074030A1

公开(公告)日：2011-03-31

申请号：US12570941

申请日：2009-09-30

申请人： Kuo Liang Wei ,  Hsu Sheng Yu ,  Hong-Ji Lee

发明人： Kuo Liang Wei ,  Hsu Sheng Yu ,  Hong-Ji Lee

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/53223 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76852 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor device and related method for fabricating the same include providing a stacked structure including an insulating base layer and lower and upper barrier layers with a conductive layer in between, etching the stacked structure to provide a plurality of conductive columns that each extend from the lower barrier layer, each of the conductive columns having an overlying upper barrier layer cap formed from the etched upper barrier layer, wherein the lower barrier layer is partially etched to provide a land region between each of the conductive lines, forming a liner layer over the etched stacked structure exposing the land region, and etching the liner layer and removing the exposed land region to form a plurality of conductive lines

摘要翻译： 半导体器件及其制造方法包括提供包括绝缘基底层和下部和上部阻挡层之间的导电层的堆叠结构，蚀刻层叠结构以提供多个导电柱，每个导电柱从下部延伸 阻挡层，每个导电柱具有由蚀刻的上阻挡层形成的覆盖的上阻挡层帽，其中下阻挡层被部分地蚀刻以在每个导电线之间提供焊盘区域，在蚀刻 层叠结构，暴露所述焊盘区域，以及蚀刻所述衬垫层并去除所述暴露的焊盘区域以形成多条导电线

公开(公告)号：US08076778B2

公开(公告)日：2011-12-13

申请号：US12570941

申请日：2009-09-30

申请人： Kuo Liang Wei ,  Hsu Sheng Yu ,  Hong-Ji Lee

发明人： Kuo Liang Wei ,  Hsu Sheng Yu ,  Hong-Ji Lee

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/40

CPC分类号： H01L23/53223 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76852 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor device and related method for fabricating the same include providing a stacked structure including an insulating base layer and lower and upper barrier layers with a conductive layer in between, etching the stacked structure to provide a plurality of conductive columns that each extend from the lower barrier layer, each of the conductive columns having an overlying upper barrier layer cap formed from the etched upper barrier layer, wherein the lower barrier layer is partially etched to provide a land region between each of the conductive lines, forming a liner layer over the etched stacked structure exposing the land region, and etching the liner layer and removing the exposed land region to form a plurality of conductive lines.

摘要翻译： 半导体器件及其制造方法包括提供包括绝缘基底层和下部和上部阻挡层之间的导电层的堆叠结构，蚀刻层叠结构以提供多个导电柱，每个导电柱从下部延伸 阻挡层，每个导电柱具有由蚀刻的上阻挡层形成的覆盖的上阻挡层帽，其中下阻挡层被部分地蚀刻以在每个导电线之间提供焊盘区域，在蚀刻 层叠结构，暴露所述焊盘区域，以及蚀刻所述衬垫层并去除所述暴露的焊盘区域以形成多条导电线。

公开(公告)号：US08372714B2

公开(公告)日：2013-02-12

申请号：US12824757

申请日：2010-06-28

申请人： Kuo Liang Wei ,  Hong-Ji Lee

发明人： Kuo Liang Wei ,  Hong-Ji Lee

IPC分类号： H01L21/336

CPC分类号： H01L21/28114 ,  H01L21/02071 ,  H01L21/28123 ,  H01L21/32137 ,  H01L21/32139

摘要： A semiconductor device can be manufactured by a method that includes forming a structure that includes a plurality of layers of semiconductor material. One or more etching processes are performed on the multi-layered semiconductor structure, and then an Ar/O2 treatment is performed on the multi-layered semiconductor structure. The Ar/O2 treatment includes exposure of the structure to Ar ion bombardment and O2 molecular oxidation. The Ar/O2 treatment can be used to create a bottle-shaped structure.

摘要翻译： 可以通过包括形成包括多层半导体材料的结构的方法来制造半导体器件。 对多层半导体结构进行一个以上的蚀刻处理，然后对多层半导体结构进行Ar / O 2处理。 Ar / O2处理包括将结构暴露于Ar离子轰击和O2分子氧化。 Ar / O2处理可用于制造瓶形结构。

公开(公告)号：US20110316096A1

公开(公告)日：2011-12-29

申请号：US12824757

申请日：2010-06-28

申请人： Kuo Liang Wei ,  Hong-Ji Lee

发明人： Kuo Liang Wei ,  Hong-Ji Lee

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L21/28

CPC分类号： H01L21/28114 ,  H01L21/02071 ,  H01L21/28123 ,  H01L21/32137 ,  H01L21/32139

摘要： A semiconductor device can be manufactured by a method that includes forming a structure that includes a plurality of layers of semiconductor material. One or more etching processes are performed on the multi-layered semiconductor structure, and then an Ar/O2 treatment is performed on the multi-layered semiconductor structure. The Ar/O2 treatment includes exposure of the structure to Ar ion bombardment and O2 molecular oxidation. The Ar/O2 treatment can be used to create a bottle-shaped structure.

摘要翻译： 可以通过包括形成包括多层半导体材料的结构的方法来制造半导体器件。 对多层半导体结构进行一个以上的蚀刻处理，然后对多层半导体结构进行Ar / O 2处理。 Ar / O2处理包括将结构暴露于Ar离子轰击和O2分子氧化。 Ar / O2处理可用于制造瓶形结构。