公开(公告)号：US20120086029A1

公开(公告)日：2012-04-12

申请号：US13037827

申请日：2011-03-01

Applicant: Kuo-Hui YU ,  Chang-Hsin Chu

Inventor： Kuo-Hui YU ,  Chang-Hsin Chu

IPC: H01L33/46

CPC classification number: H01L33/20 ,  H01L33/46 ,  H01L2933/0025

Abstract: A light-emitting diode (LED) device includes a substrate and an epitaxial layer which is disposed on a surface of the substrate. A depression is disposed to a sidewall of the LED device, and a reflective layer is disposed to on least one portion of the depression. By the reflective layer disposed to the depression of the sidewall of the LED device, the light loss caused by the interface of the substrate and the epitaxial layer can be reduced, the light absorbed by the substrate can be decreased, and the angle of the light exiting from the LED device can be adjusted. A manufacturing method of the LED device is also disclosed.

Abstract translation: 发光二极管（LED）装置包括衬底和设置在衬底的表面上的外延层。 凹陷设置在LED器件的侧壁上，反射层设置在凹陷的至少一部分上。 通过设置在LED器件的侧壁的凹陷处的反射层，可以减少由衬底和外延层的界面引起的光损失，可以减少由衬底吸收的光，并且光的角度 可以调节从LED器件退出。 还公开了LED器件的制造方法。

公开(公告)号：US20110006326A1

公开(公告)日：2011-01-13

申请号：US12753106

申请日：2010-04-02

Applicant: Kuo-Hui YU ,  Tsung-Hung LU ,  Chang-Hsin CHU

Inventor： Kuo-Hui YU ,  Tsung-Hung LU ,  Chang-Hsin CHU

IPC: H01L33/46 ,  H01L33/48

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.

Abstract translation: 描述了一种发光二极管（LED）结构及其制造方法。 发光二极管结构包括p型电极，接合衬底，p型半导体层，有源层，n型半导体层，外延生长衬底和n型电极。 接合基板设置在p型电极上。 p型半导体层设置在接合基板上。 有源层设置在p型半导体层上。 n型半导体层设置在有源层上。 外延生长衬底设置在n型半导体层上，其中外延生长衬底包括穿透外延生长衬底的开口。 n型电极设置在开口中并与n型半导体层电连接。

公开(公告)号：US20110006701A1

公开(公告)日：2011-01-13

申请号：US12887199

申请日：2010-09-21

Applicant: Kuo-Hui YU ,  Yu-Cheng YANG ,  Cheng-Ta KUO

Inventor： Kuo-Hui YU ,  Yu-Cheng YANG ,  Cheng-Ta KUO

IPC: H05B37/02 ,  H01L33/42 ,  H01L33/46 ,  F21V7/22

CPC classification number: H01L33/42 ,  H01L33/0079 ,  H01L33/32

Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

Abstract translation: 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。