公开(公告)号：US20160149030A1

公开(公告)日：2016-05-26

申请号：US14803265

申请日：2015-07-20

申请人： Kwan-Young KIM ,  Jae-Hyun YOO ,  Jin-Hyun NOH ,  Woo-Yeol MAENG ,  Yong-Woo JEON

发明人： Kwan-Young KIM ,  Jae-Hyun YOO ,  Jin-Hyun NOH ,  Woo-Yeol MAENG ,  Yong-Woo JEON

IPC分类号： H01L29/78 ,  H01L27/088 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L27/0886 ,  H01L23/528 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0873 ,  H01L29/0882 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/785

摘要： According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin and the second fin. The gate crosses the first fin and the second fin. The first fin includes a first doped area at both sides of the gate. The first doped area is configured to have a first voltage applied thereto. The second fin includes a second doped area at both sides of the gate. The second doped area is configured to have a second voltage applied thereto. The second voltage is different than the first voltage.

公开(公告)号：US20120323542A1

公开(公告)日：2012-12-20

申请号：US13481579

申请日：2012-05-25

申请人： Je-Hun LEE ,  Byung-Du AHN ,  Sei-Yong PARK ,  Jun-Hyun PARK ,  Jae-Woo PARK ,  Dae-Hwan KIM ,  Sung-Chul KIM ,  Yong-Woo JEON

发明人： Je-Hun LEE ,  Byung-Du AHN ,  Sei-Yong PARK ,  Jun-Hyun PARK ,  Jae-Woo PARK ,  Dae-Hwan KIM ,  Sung-Chul KIM ,  Yong-Woo JEON

IPC分类号： G06G7/62

CPC分类号： G06F17/5036

摘要： A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.

摘要翻译： 用于计算TFT的参数值的方法包括使用TFT的非晶半导体的带隙中的整个能带上的状态密度函数来计算一组模拟电流 - 电压（I-V）值。 所述方法还包括将所述一组模拟I-V值与所述TFT的测量I-V值的集合进行比较，以确定所述TFT的参数的值。 该方法还可以包括使用根据频率测量的TFT的一组静电电容电压（C-V）值来计算受主状态密度函数gA的值。 该方法还可以包括在带隙中的整个能带上确定施主状态密度函数gD的值和接口状态密度函数Dit的值。

公开(公告)号：US20080096606A1

公开(公告)日：2008-04-24

申请号：US11844107

申请日：2007-08-23

申请人： Jung-Bae PARK ,  Yong-Woo JEON ,  Byoung-Joo YI ,  Gyu-Bok LEE ,  Sung-Sun PARK ,  Young-Jun JUNG

发明人： Jung-Bae PARK ,  Yong-Woo JEON ,  Byoung-Joo YI ,  Gyu-Bok LEE ,  Sung-Sun PARK ,  Young-Jun JUNG

IPC分类号： H04B1/38

CPC分类号： H04B1/3818 ,  G06K7/0021 ,  G06K13/0831 ,  H04B1/3816 ,  H04M1/0202 ,  H04M2250/14

摘要： An apparatus for detachably installing a smart card, such as a Subscriber Identity Module (SIM) card, in a portable terminal is provided. The apparatus includes an opening on the portable terminal, a sliding member slidably coupled to the terminal to move in and out of the opening, and a cover on an end portion of the sliding member to open and close the opening as the sliding member slides. The SIM card is placed on the sliding member to move in and out of the opening through a sliding movement of the sliding member. The apparatus prevent damage to the SIM card when it is detachably installed in the portable terminal through the sliding movement of the sliding member.

摘要翻译： 提供了一种用于在便携式终端中可拆卸地安装诸如订户身份模块（SIM）卡的智能卡的装置。 该装置包括便携式终端上的一个开口，一个可滑动地连接到端子上以便进出开口的滑动构件，以及滑动构件端部上的一个盖子，当滑动构件滑动时打开和关闭开口。 SIM卡被放置在滑动构件上，以通过滑动构件的滑动运动进入和离开开口。 该装置通过滑动构件的滑动运动可防止SIM卡被可拆卸地安装在便携式终端中时造成损坏。