Infrared display with luminescent quantum dots
    1.
    发明授权
    Infrared display with luminescent quantum dots 有权
    具有发光量子点的红外显示

    公开(公告)号:US08120239B2

    公开(公告)日:2012-02-21

    申请号:US12048061

    申请日:2008-03-13

    CPC classification number: G02F2/02 G02F1/0126 G02F1/133617 G02F2203/12

    Abstract: A display device that includes an underlying excitation source, a converting layer, and an optical filter layer. The underlying excitation source emits light in a spatial pattern that may or may not be altered in time and has a short wavelength capable of being at least partially absorbed by the overlying converting layer. The converting layer can be a contiguous film or pixels of quantum dots that can be dispersed in a matrix material. This converting layer is capable of absorbing at least a portion of the wavelength(s) of the light from the underlying excitation source and emitting light at one or more different wavelengths. The optical filter layer prevents the residual light from the excitation source that was not absorbed by the converting layer from being emitted by the display device.

    Abstract translation: 一种显示装置,包括下面的激发源,转换层和光学滤光层。 潜在的激发源以空间图案发光,其可以或不会在时间上改变,并且具有能够被上覆转换层至少部分地吸收的短波长。 转换层可以是可以分散在基质材料中的连续膜或量子点的像素。 该转换层能够吸收来自下面的激发源的光的至少一部分波长并以一个或多个不同的波长发射光。 光学滤波器层防止来自激发源的残留的光不被转换层吸收而被显示装置发射。

    Light emitting diode comprising semiconductor nanocrystal complexes and powdered phosphors
    2.
    发明申请
    Light emitting diode comprising semiconductor nanocrystal complexes and powdered phosphors 审中-公开
    包含半导体纳米晶体复合物和粉末状磷光体的发光二极管

    公开(公告)号:US20070012928A1

    公开(公告)日:2007-01-18

    申请号:US11485335

    申请日:2006-07-13

    CPC classification number: H01L33/504 B82Y20/00 B82Y30/00

    Abstract: A white light light emitting diode (LED) formed by depositing an LED chip that emits light at a first wavelength and forming a semiconductor nanocrystal complex. The semiconductor nanocrystal complex absorbs at least a portion of the light emitted by the LED chip and emits light at a second wavelength. The semiconductor nanocrystal complex and a powdered phosphor are deposited over the LED chip. The powdered phosphor also absorbs a portion of the light emitted by the LED chip and emits light at a third wavelength. The semiconductor nanocrystal complex is selected to provide a color of the spectrum that is lacking from the combined output of phosphor/LED chip combination, to improve a Color Rating Index (CRI) value and to provide a “warmer” light. The semiconductor nanocrystal complex and the powdered phosphor can be mixed into the same matrix material or into separate matrix materials and/or deposited as separate layers.

    Abstract translation: 一种白光发光二极管(LED),其通过沉积发射第一波长的光并形成半导体纳米晶体复合体的LED芯片形成。 半导体纳米晶体复合体吸收由LED芯片发射的光的至少一部分并发射第二波长的光。 半导体纳米晶体复合体和粉末状磷光体沉积在LED芯片上。 粉状磷光体还吸收由LED芯片发射的光的一部分并发射第三波长的光。 选择半导体纳米晶体复合体以提供从荧光体/ LED芯片组合的组合输出缺乏的光谱的颜色,以提高颜色等级指数(CRI)值并提供“更暖”的光。 半导体纳米晶体复合物和粉末状磷光体可以混合到相同的基质材料或分离的基质材料中和/或作为分开的层沉积。

    POWDERED QUANTUM DOTS
    3.
    发明申请
    POWDERED QUANTUM DOTS 有权
    粉末量子

    公开(公告)号:US20120193605A1

    公开(公告)日:2012-08-02

    申请号:US13017433

    申请日:2011-01-31

    CPC classification number: B82Y30/00 H01L33/502

    Abstract: Powdered quantum dots that can be dispersed into a silicone layer are provided. The powdered quantum dots are a plurality of quantum dot particles, preferably on the micron or nanometer scale. The powdered quantum dots can include quantum dot-dielectric particle complexes or quantum dot-crosslinked silane complexes. The powdered quantum dots can included quantum dot particles coated with a dielectric layer.

    Abstract translation: 提供可以分散到硅树脂层中的粉末量子点。 粉末状量子点是多个量子点粒子,优选微米或纳米级。 粉末量子点可以包括量子点 - 电介质颗粒复合物或量子点交联硅烷配合物。 粉末量子点可以包括涂覆有介电层的量子点颗粒。

    Quantum dot particles on the micron or nanometer scale and method of making the same
    4.
    发明授权
    Quantum dot particles on the micron or nanometer scale and method of making the same 有权
    量子点微粒上的微米或纳米级及其制作方法

    公开(公告)号:US08618528B2

    公开(公告)日:2013-12-31

    申请号:US13017433

    申请日:2011-01-31

    CPC classification number: B82Y30/00 H01L33/502

    Abstract: Powdered quantum dots that can be dispersed into a silicone layer are provided. The powdered quantum dots are a plurality of quantum dot particles, preferably on the micron or nanometer scale. The powdered quantum dots can include quantum dot-dielectric particle complexes or quantum dot-crosslinked silane complexes. The powdered quantum dots can included quantum dot particles coated with a dielectric layer.

    Abstract translation: 提供可以分散到硅树脂层中的粉末量子点。 粉末状量子点是多个量子点粒子,优选微米或纳米级。 粉末量子点可以包括量子点 - 电介质颗粒复合物或量子点交联硅烷配合物。 粉末量子点可以包括涂覆有介电层的量子点颗粒。

    High-refractive index materials comprising semiconductor nanocrystal compositions, methods of making same, and applications therefor
    5.
    发明授权
    High-refractive index materials comprising semiconductor nanocrystal compositions, methods of making same, and applications therefor 失效
    包含半导体纳米晶体组合物的高折射率材料,其制备方法及其应用

    公开(公告)号:US07524746B2

    公开(公告)日:2009-04-28

    申请号:US11683973

    申请日:2007-03-08

    CPC classification number: H01L29/22 B82Y30/00 H01L29/20 H01L29/24 H01L33/44

    Abstract: A high-refractive index material that includes semiconductor nanocrystal compositions. The high-refractive index material has at least one semiconductor nanocrystal composition incorporated in a matrix material and has a refractive index greater than 1.5. The semiconductor nanocrystal composition has a semiconductor nanocrystal core of a II-VI, III-V, or IV-VI semiconductor material. A method of making a high-refractive index material includes incorporating, at least one semiconductor nanocrystal composition in a matrix material. An application of a high-refractive index material includes incorporating at least one semiconductor nanocrystal composition in a matrix material to form the high-refractive index material and depositing the high-refractive index material on the surface of a lighting device.

    Abstract translation: 包括半导体纳米晶体组合物的高折射率材料。 高折射率材料具有并入基质材料中并具有大于1.5的折射率的至少一种半导体纳米晶体组合物。 半导体纳米晶体组合物具有II-VI,III-V或IV-VI半导体材料的半导体纳米晶核。 制造高折射率材料的方法包括在基质材料中并入至少一种半导体纳米晶体组合物。 高折射率材料的应用包括将至少一种半导体纳米晶体组合物并入基质材料中以形成高折射率材料并将高折射率材料沉积在照明装置的表面上。

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