Abstract:
A single ended sensing scheme amplifies the logic state stored within a non-volatile memory circuit by relying upon three stages, a clamping circuit, a first operational amplifier and a second operational amplifier. The clamping circuit clamps the voltage at a voltage level with a small voltage swing between the logic states. The first stage and second stage operational amplifiers increase the clamped voltage level. A reference memory circuit ensures that the sensing scheme output is properly adjusted to compensate for voltage and temperature variations as well as noise injection from the power supply and ground.