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公开(公告)号:US20130049009A1
公开(公告)日:2013-02-28
申请号:US13596372
申请日:2012-08-28
申请人: KyoungJun Kim , JongSe Park , Donghyun Kim , Bohyun Lee , MinJu Kim , BongHee Jang
发明人: KyoungJun Kim , JongSe Park , Donghyun Kim , Bohyun Lee , MinJu Kim , BongHee Jang
CPC分类号: H01L33/0075 , H01L33/405
摘要: A multi-layer substrate for a vertical light-emitting diode (LED) includes a conductive and reflective base substrate and an n-type gallium nitride (GaN) layer formed on the base substrate.
摘要翻译: 用于垂直发光二极管(LED)的多层基板包括形成在基底基板上的导电和反射基底基板和n型氮化镓(GaN)层。