Abstract:
A multi-layer substrate for a vertical light-emitting diode (LED) includes a conductive and reflective base substrate and an n-type gallium nitride (GaN) layer formed on the base substrate.
Abstract:
A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of: forming an ion implantation layer by implanting ions into a substrate; annealing the substrate in which the ion implantation layer is formed; implanting ions again into the ion implantation layer of the substrate; and cleaving the substrate along the ion implantation layer by heating the substrate into which ions are implanted.