公开(公告)号：US07446384B2

公开(公告)日：2008-11-04

申请号：US11395157

申请日：2006-04-03

申请人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

发明人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

IPC分类号： H01L27/14 ,  H01L31/00

CPC分类号： H01L31/02162 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is deposited, an electrode rearrangement and a dicing process, a miniaturized image sensor module using this wafer level chip size package (WL-CSP) and a method thereof. The CMOS image sensor module using a wafer level chip size package technology according to the present invention comprises: an image sensor chip wafer having a partition with a lattice structure formed at portions except an image sensing area; and a glass wafer with an IR filter coating layer and a metal electrode; and wherein the image sensor chip wafer and the glass wafer form an electric contact and a chip sealing by a flip-chip bonding; and wherein a solder bump and a non solder bump are formed after a metal wiring is rearranged on a lower surface of the glass wafer. According to the present invention, it is possible to realize a cheap wafer level chip size package (WL-CSP) using the existing wafer processing and the metal deposition processing equipments. Further, an image sensor module with smaller thickness and area than the existing CSP package can be realized. Moreover, an image sensor module with a smaller area than the existing COG package can be realized.

摘要翻译： 图像传感器模块及其制造方法技术领域本发明涉及一种图像传感器模块及其制造方法，特别涉及通过将图像传感器芯片晶片直接接触到其上沉积有IR滤光器涂层的玻璃晶片实现的晶片级芯片尺寸封装（WL-CSP） ，电极重排和切割处理，使用该晶片级芯片尺寸封装（WL-CSP）的小型化图像传感器模块及其方法。 使用根据本发明的晶片级芯片尺寸封装技术的CMOS图像传感器模块包括：图像传感器芯片晶片，具有形成在除了图像感测区域之外的部分处的格子结构的分隔; 和具有IR滤光器涂层和金属电极的玻璃晶片; 并且其中所述图像传感器芯片晶片和所述玻璃晶片通过倒装芯片接合形成电接触和芯片密封; 并且其中在金属布线重新布置在玻璃晶片的下表面上之后形成焊料凸块和非焊料凸块。 根据本发明，可以使用现有的晶片处理和金属沉积处理设备来实现廉价的晶片级芯片尺寸封装（WL-CSP）。 此外，可以实现具有比现有CSP封装更小的厚度和面积的图像传感器模块。 此外，可以实现具有比现有COG封装小的面积的图像传感器模块。

公开(公告)号：US20060252246A1

公开(公告)日：2006-11-09

申请号：US11395157

申请日：2006-04-03

申请人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

发明人： Kyung-Wook Paik ,  Myung-Jin Yim ,  Ho-Young Son ,  Yong-Min Kwon

IPC分类号： H01L21/44

CPC分类号： H01L31/02162 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is deposited, an electrode rearrangement and a dicing process, a miniaturized image sensor module using this wafer level chip size package (WL-CSP) and a method thereof. The CMOS image sensor module using a wafer level chip size package technology according to the present invention comprises: an image sensor chip wafer having a partition with a lattice structure formed at portions except an image sensing area; and a glass wafer with an IR filter coating layer and a metal electrode; and wherein the image sensor chip wafer and the glass wafer form an electric contact and a chip sealing by a flip-chip bonding; and wherein a solder bump and a non solder bump are formed after a metal wiring is rearranged on a lower surface of the glass wafer. According to the present invention, it is possible to realize a cheap wafer level chip size package (WL-CSP) using the existing wafer processing and the metal deposition processing equipments. Further, an image sensor module with smaller thickness and area than the existing CSP package can be realized. Moreover, an image sensor module with a smaller area than the existing COG package can be realized.

摘要翻译： 图像传感器模块及其制造方法技术领域本发明涉及一种图像传感器模块及其制造方法，特别涉及通过将图像传感器芯片晶片直接接触到其上沉积有IR滤光器涂层的玻璃晶片实现的晶片级芯片尺寸封装（WL-CSP） ，电极重排和切割处理，使用该晶片级芯片尺寸封装（WL-CSP）的小型化图像传感器模块及其方法。 使用根据本发明的晶片级芯片尺寸封装技术的CMOS图像传感器模块包括：图像传感器芯片晶片，具有形成在除了图像感测区域之外的部分处的格子结构的分隔; 和具有IR滤光器涂层和金属电极的玻璃晶片; 并且其中所述图像传感器芯片晶片和所述玻璃晶片通过倒装芯片接合形成电接触和芯片密封; 并且其中在金属布线重新布置在玻璃晶片的下表面上之后形成焊料凸块和非焊料凸点。 根据本发明，可以使用现有的晶片处理和金属沉积处理设备来实现廉价的晶片级芯片尺寸封装（WL-CSP）。 此外，可以实现具有比现有CSP封装更小的厚度和面积的图像传感器模块。 此外，可以实现具有比现有COG封装小的面积的图像传感器模块。