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8 条记录 (耗时 0.027 秒)

    Electro-static chuck with non-sintered aln and a method of preparing the same
    2.
    发明申请
    Electro-static chuck with non-sintered aln and a method of preparing the same 审中-公开
    具有非烧结Aln的静电卡盘及其制备方法

    公开(公告)号：US20070065678A1

    公开(公告)日：2007-03-22

    申请号：US10575031

    申请日：2004-10-06

    申请人： Kyung-hyun Ko ,  Ha-yong Lee ,  Jae-hong Lee ,  Hung-sang Lee ,  Jae-jung Lee

    发明人： Kyung-hyun Ko ,  Ha-yong Lee ,  Jae-hong Lee ,  Hung-sang Lee ,  Jae-jung Lee

    IPC分类号： B32B9/00 ,  B32B19/00 ,  H05H1/24 ,  B05D1/12 ,  B05D3/02

    CPC分类号： H01L21/6833 ,  C23C16/4586 ,  C23C24/04

    摘要： The present invention relates to an electro-static chuck with non-sintered AlN and a method of preparing the same. Especially, the present invention relates to the electro-static chuck with non-sintered AlN which having coated aluminum nitride (AlN) layer as a dielectric one on the purpose of chucking the wafers in the process of wafers and a method of preparing the same. The electro-static chuck of the present invention has excellent dielectric characteristics, bonding strength and thermal conductivity by forming an AlN layer as a dielectric one without sintering process or bonding process with binders.

    摘要翻译： 本发明涉及具有非烧结AlN的静电卡盘及其制备方法。 特别地，本发明涉及具有非烧结AlN的静电卡盘及其制备方法，该非磁性卡盘具有涂覆的氮化铝（AlN）层作为电介质，具有夹持晶片的晶片的目的。 本发明的静电卡盘通过不用烧结工艺或粘合剂进行烧结工艺或粘接工艺，通过形成作为电介质的AlN层，具有优异的介电特性，结合强度和导热性。

    Semiconductor probe having embossed resistive tip and method of fabricating the same
    4.
    发明授权
    Semiconductor probe having embossed resistive tip and method of fabricating the same 有权
    具有压电电阻端头的半导体探针及其制造方法

    公开(公告)号：US07671616B2

    公开(公告)日：2010-03-02

    申请号：US11772441

    申请日：2007-07-02

    申请人： Ju-hwan Jung ,  Jae-hong Lee ,  Hyung-cheol Shin ,  Jun-soo Kim ,  Seung-bum Hong

    发明人： Ju-hwan Jung ,  Jae-hong Lee ,  Hyung-cheol Shin ,  Jun-soo Kim ,  Seung-bum Hong

    IPC分类号： G01R31/02 ,  G01N23/00

    CPC分类号： G01Q60/30

    摘要： A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions.

    摘要翻译： 提供具有压花电阻端头的半导体探针和制造半导体探针的方法。 半导体探针包括突起部，该突起部在与悬臂的长度方向交叉的第一方向上在悬臂上突出规定的高度，形成在突出部上的压电电阻端子以及形成在突起部的相反侧的第一和第二半导体电极区域 在突出部分处的压电电阻尖端，其中所述悬臂掺杂有第一掺杂剂，所述第一和第二半导体电极区域和所述压电电阻尖端掺杂有与所述第一掺杂剂具有不同极性的第二掺杂剂，并且所述压花电阻尖端 掺杂浓度低于第一和第二半导体电极区域。

    Method and apparatus for generating run-length limited code
    8.
    发明授权
    Method and apparatus for generating run-length limited code 失效
    用于生成游程限制代码的方法和装置

    公开(公告)号：US5812073A

    公开(公告)日：1998-09-22

    申请号：US510140

    申请日：1995-07-31

    申请人： Jae-hong Lee ,  Min-goo Kim ,  Kwang-man Ok ,  Yoon-woo Lee

    发明人： Jae-hong Lee ,  Min-goo Kim ,  Kwang-man Ok ,  Yoon-woo Lee

    IPC分类号： G11B20/10 ,  G11B20/14 ,  H03M5/14 ,  H03M7/00

    CPC分类号： H03M5/145

    摘要： A method and an apparatus are provided for generating an (4,20) RLL modulation code having a decreased detectible window width and an increased recording density ratio. The code's spectrum is concentrated in the low-frequency band, thereby improving the signal-to-noise ratio. In addition, the hardware of an encoder and a decoder can be easily implemented since the modulation code has a fixed codeword length.

    摘要翻译： 提供了一种用于产生具有降低的可检测窗口宽度和增加的记录密度比的（4,20）RLL调制码的方法和装置。 代码的频谱集中在低频带，从而提高信噪比。 此外，编码器和解码器的硬件可以容易地实现，因为调制码具有固定的码字长度。