公开(公告)号：US10079168B2

公开(公告)日：2018-09-18

申请号：US15690203

申请日：2017-08-29

Applicant: Lam Research Corporation

Inventor： Neil Martin Paul Benjamin ,  Henry Povolny ,  Anthony J. Ricci

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/67253 ,  H01L22/26

Abstract: A ceramic assembly is attached to a lower support structure having a bowl shape. The ceramic assembly has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic assembly. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic assembly at a location vertically below the at least one clamp electrode such that a region of the ceramic assembly between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic assembly. Each of the RF power delivery connection modules is configured to form an electrical connection from the lower support structure to the primary RF power delivery electrode at its respective location.

公开(公告)号：US20170287680A1

公开(公告)日：2017-10-05

申请号：US15628528

申请日：2017-06-20

Applicant: Lam Research Corporation

Inventor： Neil Martin Paul Benjamin ,  Henry Povolny ,  Anthony J. Ricci

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32082 ,  H01J2237/334 ,  H01L21/67253 ,  H01L21/6833 ,  H01L22/26

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

公开(公告)号：US10812033B2

公开(公告)日：2020-10-20

申请号：US15933213

申请日：2018-03-22

Applicant: Lam Research Corporation

Inventor： Sean Kelly O'Brien ,  Seyed Jafar Jafarian-Tehrani ,  Hema Swaroop Mopidevi ,  Neil Martin Paul Benjamin ,  Jason Augustino

IPC: H03H1/00 ,  H03H7/01 ,  H01F27/28 ,  H01F27/24 ,  H01J37/00 ,  H01F19/04 ,  H01F17/00 ,  H01F27/00 ,  H01J37/32 ,  H01L21/683

Abstract: Various embodiments include an apparatus to filter radio-frequencies in a plasma-based processing device. In various embodiments, an RF filter device includes a number of substantially-planar spiral-filters electrically coupled to and substantially parallel to each other in a spaced-apart arrangement. In one embodiment, each of the planar spiral-filters is coupled to an adjacent one of the planar spiral filters as either an inside-to-inside electrical connection or an outside-to-outside electrical connection based on an arrangement of the successive spirals so as to increase a total value of inductance. Other methods, devices, apparatuses, and systems are disclosed.

公开(公告)号：US20200035460A1

公开(公告)日：2020-01-30

申请号：US16045644

申请日：2018-07-25

Applicant: Lam Research Corporation

Inventor： Neil Martin Paul Benjamin ,  John Pease

IPC: H01J37/32 ,  H02H9/02

Abstract: A dual mode power device for controlling voltage level to a plasma processing apparatus is disclosed. The dual mode power device comprises a power supply connector and a control circuit. The power supply connector is connected to a first voltage power supply or a second voltage power supply. The control circuit is connected between an output of the power supply connector and a first and second voltage subsystem of the plasma processing apparatus. The control circuit provides a first voltage based on the first voltage power supply to the first voltage subsystem in a first mode of operation of the plasma processing apparatus. The control circuit provides a second voltage based on the second voltage power supply to the second voltage subsystem in a second mode of operation of the plasma processing apparatus.

公开(公告)号：US20180130689A1

公开(公告)日：2018-05-10

申请号：US15690184

申请日：2017-08-29

Applicant: Lam Research Corporation

Inventor： Neil Martin Paul Benjamin ,  Henry Povolny ,  Anthony J. Ricci

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H01J2237/334

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. A clamp electrode assembly is positioned within an upper region of the ceramic layer. The clamp electrode assembly serves to clamp the substrate to the top surface of the ceramic layer and functions as a primary radiofrequency (RF) power delivery electrode. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the clamp electrode assembly at its respective location.

公开(公告)号：US20170263418A1

公开(公告)日：2017-09-14

申请号：US15607147

申请日：2017-05-26

Applicant: Lam Research Corporation

Inventor： Neil Martin Paul Benjamin ,  Henry Povolny ,  Anthony J. Ricci

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66 ,  H01L21/683

CPC classification number: H01J37/32082 ,  H01J2237/334 ,  H01L21/67253 ,  H01L21/6833 ,  H01L22/26

Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

公开(公告)号：US20130235506A1

公开(公告)日：2013-09-12

申请号：US13868044

申请日：2013-04-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Keith William Gaff ,  Neil Martin Paul Benjamin

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H01L21/67248

Abstract: A chuck includes a first material layer having an upper surface upon which a wafer is supported. The upper surface includes portions that physically contact the wafer and portions that form gaps between the upper surface and the wafer. The chuck also includes a second material layer defined to support the first material layer. The second material layer is formed of a thermally conductive material and includes a first number of channels. The chuck also includes a second number of channels defined to direct a gas to portions of the upper surface that form gaps between the upper surface and the wafer. The chuck is characterized by a thermal calibration curve that represents a thermal interface between the upper surface and the wafer, heat transfer through the first material layer to the second material layer, and heat transfer through the second material layer to the first number of channels.

Abstract translation: 卡盘包括具有上表面的第一材料层，晶片被支撑在该上表面上。 上表面包括物理接触晶片的部分和在上表面和晶片之间形成间隙的部分。 卡盘还包括限定为支撑第一材料层的第二材料层。 第二材料层由导热材料形成并且包括第一数量的通道。 卡盘还包括限定为将气体引导到在上表面和晶片之间形成间隙的上表面的部分的通道的第二数量。 卡盘的特征在于热校准曲线，其表示上表面和晶片之间的热界面，通过第一材料层的热传递到第二材料层，以及通过第二材料层的热传递到第一数量的通道。

公开(公告)号：US20230274912A1

公开(公告)日：2023-08-31

申请号：US18142570

申请日：2023-05-02

Applicant: Lam Research Corporation

Inventor： John Stephen Drewery ,  Neil Martin Paul Benjamin

IPC: H01J37/32

CPC classification number: H01J37/32119 ,  H01J37/32522 ,  H01J2237/002

Abstract: In one embodiment, the disclosed apparatus is a heat-pipe cooling system that includes a conical structure having an upper portion that is configured to be formed above a dielectric window with the conical structure being configured to condense vapor from a heat-transfer fluid placed or incorporated within a volume formed between the dielectric window and the conical structure. At least one cooling coil is formed on an exterior portion of the conical structure. Other apparatuses and systems are disclosed.

公开(公告)号：US11177067B2

公开(公告)日：2021-11-16

申请号：US16045635

申请日：2018-07-25

Applicant: Lam Research Corporation

Inventor： Hema Swaroop Mopidevi ,  Neil Martin Paul Benjamin ,  John Pease ,  Thomas Anderson

IPC: H01J37/32 ,  H01L21/683 ,  H01F27/36 ,  H01F27/34

Abstract: In some examples, a magnetic shield for a plasma source is provided. An example magnetic shield comprises a back-shell. The back-shell includes a cage defined, at least in part, by an arrangement of bars of ferro-magnetic material. The cage is sized and configured to at least extend over a top side of an RF source coil for the plasma source.

公开(公告)号：US10896808B2

公开(公告)日：2021-01-19

申请号：US16045644

申请日：2018-07-25

Applicant: Lam Research Corporation

Inventor： Neil Martin Paul Benjamin ,  John Pease

IPC: H01J37/32 ,  H02H9/02

Abstract: A dual mode power device for controlling voltage level to a plasma processing apparatus is disclosed. The dual mode power device comprises a power supply connector and a control circuit. The power supply connector is connected to a first voltage power supply or a second voltage power supply. The control circuit is connected between an output of the power supply connector and a first and second voltage subsystem of the plasma processing apparatus. The control circuit provides a first voltage based on the first voltage power supply to the first voltage subsystem in a first mode of operation of the plasma processing apparatus. The control circuit provides a second voltage based on the second voltage power supply to the second voltage subsystem in a second mode of operation of the plasma processing apparatus.