BROADBAND DOHERTY POWER AMPLIFIER AND IMPLEMENTATION METHOD THEREOF

    公开(公告)号:US20230246597A1

    公开(公告)日:2023-08-03

    申请号:US18132426

    申请日:2023-04-10

    Abstract: A broadband Doherty power amplifier is provided, which includes a power divider, a carrier power amplifier circuit, a peak power amplifier circuit, and a load modulation network. The carrier power amplifier circuit includes a carrier input matching circuit, a carrier power amplifier, and a carrier output matching circuit. The peak power amplifier circuit includes a peak input matching circuit, a peak power amplifier and a peak output matching circuit. A resistance value of a system load is ZL. An output impedance of the carrier output matching circuit is Zm and meets Zm=ZL(n+ 1). An output impedance of the peak output matching circuit is Zp and meets Zp ZL(n+1)/n. The load modulation network is configured to set an impedance of a combination point to be ZQ, whose resistance value is ZL. A method of implementing a broadband Doherty power amplifier is further provided.

    RADIO FREQUENCY LOW-NOISE AMPLIFIER CIRCUIT AND RADIO FREQUENCY CHIP

    公开(公告)号:US20240413795A1

    公开(公告)日:2024-12-12

    申请号:US18806717

    申请日:2024-08-16

    Abstract: A radio frequency low-noise amplifier circuit and a radio frequency chip includes a signal input end, an input matching circuit, an amplification circuit, an output matching circuit, a signal output end, and a gain adjustment circuit connected in parallel with the amplification circuit. The gain adjustment circuit includes a tenth transistor, an eleventh transistor, a twelfth transistor, a first resistor, a second resistor, a third resistor, and a fourth capacitor. A source of the tenth transistor, a source of the eleventh transistor, and a source of the twelfth transistor are connected and are grounded. The tenth transistor is connected to the first resistor, the eleventh transistor is connected to the second resistor, and the twelfth transistor is connected to the third resistor. The first resistor, the second resistor, and the third resistor are connected to the fourth capacitor. The fourth capacitor is connected to the amplification circuit.

    TEMPERATURE COMPENSATION BIAS CIRCUIT AND POWER AMPLIFIER

    公开(公告)号:US20240405734A1

    公开(公告)日:2024-12-05

    申请号:US18806715

    申请日:2024-08-16

    Abstract: A temperature compensation bias circuit is provided, including a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, a second capacitor, a third capacitor, a fifth capacitor, a fifth transistor, a sixth transistor, and a seventh transistor. A power amplifier is further provided, the power amplifier applies the temperate compensation bias circuit. Compared with the prior art, there are fewer effects on a bias point of the temperature compensation bias circuit when the temperature compensation bias circuit and the power amplifier are in RF operating states, the power amplifier is enabled to have good temperature compensation effect and high linearity.

    COPLANAR WAVEGUIDE TRANSMISSION LINE AND DESIGN METHOD THEREOF

    公开(公告)号:US20230361444A1

    公开(公告)日:2023-11-09

    申请号:US18353884

    申请日:2023-07-18

    CPC classification number: H01P3/006 H01P5/1015 H01P3/10

    Abstract: A coplanar waveguide transmission line and a design method thereof are provided. The coplanar waveguide transmission line includes a first dielectric substrate, a center conductor strip, and two ground conductor strips. The first dielectric substrate has a first surface and a second surface opposite to each other. The center conductor strip and the ground conductor strips are stacked and fixed to the first surface. The center conductor strip includes a first segment and a second segment. A width of the first segment is greater than a width of the second segment, so that the first segment and the second segment form a step structure. A rectangular groove recessed toward the second surface is defined in the first surface, and a part of the center conductor strip is stacked and fixed to a side, distal from the second surface, of the rectangular groove to form a defected ground structure.

    RESISTOR-CAPACITOR OSCILLATION CIRCUIT
    5.
    发明公开

    公开(公告)号:US20230253920A1

    公开(公告)日:2023-08-10

    申请号:US18131872

    申请日:2023-04-07

    CPC classification number: H03B5/20 H03K3/037 H03K19/20

    Abstract: A resistor-capacitor oscillation circuit includes a first group of inverters, a second group of inverters, a latch, a delay circuit, and a third group of inverters. The first group of the inverters is connected to the delay circuit and is configured to generate a first signal A and a second signal B. An input end of the second group of the inverters is connected to an enable signal EN. An output end of the second group of the inverters is connected to the latch. An output end of the delay circuit is connected to the latch. The latch is connected to the third group of the inverters and includes a first output end and a second output end. After a first clock signal FB is driven by the third group of the inverters, an output signal CLK is output by an output end of the third group.

    METHOD FOR ISOLATING TRANSMISSION LINES OF RADIO FREQUENCY POWER AMPLIFIER AND TRANSMISSION STRUCTURE FOR RADIO FREQUENCY POWER AMPLIFIER

    公开(公告)号:US20230246608A1

    公开(公告)日:2023-08-03

    申请号:US18132425

    申请日:2023-04-10

    CPC classification number: H03F3/24 H03F3/60 H03F2200/451

    Abstract: A method for isolating transmission lines of a radio frequency power amplifier and a transmission structure of the radio frequency power amplifier are provided. The method includes steps of setting a distance between adjacent two of transmission lines on a chip substrate to be greater than 2.5 times a width of each of the transmission lines, and disposing shielding lines at an inner side of each of the transmission lines and an outer side of each of the transmission lines opposite to the inner side; wrapping a permalloy layer on an outer wall of each of the transmission lines; and wrapping an aluminum layer on an outer wall of the permalloy layer, defining a plurality of grooves on an outer wall of the aluminum layer at intervals, where the plurality of the grooves are recessed inward and in an inverted triangular structure.

    DIFFERENTIAL POWER AMPLIFIER
    7.
    发明公开

    公开(公告)号:US20230246606A1

    公开(公告)日:2023-08-03

    申请号:US18132422

    申请日:2023-04-10

    CPC classification number: H03F3/21 H03F1/565 H03F2200/387 H03F2200/255

    Abstract: A differential power amplifier includes an input matching network, a first-stage amplification circuit, a first inter-stage matching network, a second-stage amplification circuit, a second inter-stage matching network, a third-stage amplification circuit, and an output matching network. The first-stage amplification circuit and the second-stage amplification circuit are single-ended input single-ended output circuits. The third-stage amplification circuit is a dual input dual output circuit. The second inter-stage matching network includes a first transformer T1, a first capacitor C1, a second capacitor C2, a first inductor L1, and a second inductor L2. The output matching network includes a second transformer T2. The inter-stage matching networks and the output matching network are realized by the first transformer T1 and the second transformer T2, which reduces an inter-stage matching difficulty, optimizes input return loss and gain, and improves output power.

    ADAPTIVE FREQUENCY SWEEPING METHOD AND ADAPTIVE FREQUENCY SWEEPING SYSTEM FOR FREQUENCY POINT SAMPLING, AND RELATED DEVICE

    公开(公告)号:US20240413528A1

    公开(公告)日:2024-12-12

    申请号:US18813047

    申请日:2024-08-23

    Abstract: An adaptive frequency sweeping method and an adaptive frequency sweeping system for frequency point sampling, and related devices, related to a technical field of wireless communication are provided, the adaptive frequency sweeping method is applied to simulation of radio frequency (RF) components. The adaptive frequency sweeping method for the frequency point sampling does not hinge upon specific numerical values and enables precise simulation at positions where frequency responses rapidly change while performing coarse simulation in areas that are not concerned about, thereby improving precision and efficiency of a design process for the RF components. Moreover, aiming at characteristics of Y parameters and S parameters in the frequency responses, different evaluation metrics are provided to reduce sampling points required for frequency sweeping and increasing a frequency sweeping speed.

    LDO POWER SUPPLY CIRCUIT AND POWER AMPLIFIER

    公开(公告)号:US20230305586A1

    公开(公告)日:2023-09-28

    申请号:US18132424

    申请日:2023-04-10

    Abstract: An LDO power supply circuit includes an operational amplifier, a first transistor, and a resistance feedback network including a first branch and a second branch. A negative electrode input end of the operational amplifier connects a control voltage. An output end of the operational amplifier connects a gate electrode of the first transistor. A source electrode of the first transistor connects a power supply voltage. A positive electrode input end of the operational amplifier and a drain electrode of the first transistor are respectively an input end and an output end of the LDO power supply circuit. The resistance feedback network connects between the drain electrode of the first transistor and the positive electrode input end of the operational amplifier. A first feedback coefficient formed by the first branch is different from a second feedback coefficient formed by the second branch. The present disclosure further provides a power amplifier.

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