公开(公告)号：US20140073094A1

公开(公告)日：2014-03-13

申请号：US13728709

申请日：2012-12-27

Applicant: LG DISPLAY CO., LTD.

Inventor： Ohnam Kwon ,  Haeyeol Kim

IPC: H01L29/66 ,  H01L29/40

CPC classification number: H01L29/66742 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/76877 ,  H01L21/7688 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78603

Abstract: This document relates to a method of forming low-resistance metal gate and data wirings and a method of manufacturing a thin film transistor using the same. The method of the wiring includes depositing a metal layer on a base layer; exposing a portion of the base layer by removing a portion of the metal layer; forming grooves in the base layer; forming a seed layer in the grooves of the base layer; and forming a wire consisting of the seed layer and a plated layer by plating a plating material on the seed layer formed in the grooves of the base layer.

Abstract translation: 本文件涉及形成低电阻金属栅极和数据布线的方法以及使用其制造薄膜晶体管的方法。 布线方法包括在基层上沉积金属层; 通过去除金属层的一部分来暴露基底层的一部分; 在基层中形成凹槽; 在基层的槽中形成种子层; 以及通过在形成在所述基底层的沟槽中的种子层上镀覆电镀材料来形成由种子层和镀层组成的线。

公开(公告)号：US09082791B2

公开(公告)日：2015-07-14

申请号：US13728709

申请日：2012-12-27

Applicant: LG DISPLAY CO., LTD.

Inventor： Ohnam Kwon ,  Haeyeol Kim

IPC: H01L21/44 ,  H01L29/66 ,  H01L21/768 ,  H01L21/311 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L29/40

CPC classification number: H01L29/66742 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/76877 ,  H01L21/7688 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78603

Abstract: This document relates to a method of forming low-resistance metal gate and data wirings and a method of manufacturing a thin film transistor using the same. The method of the wiring includes depositing a metal layer on a base layer; exposing a portion of the base layer by removing a portion of the metal layer; forming grooves in the base layer; forming a seed layer in the grooves of the base layer; and forming a wire consisting of the seed layer and a plated layer by plating a plating material on the seed layer formed in the grooves of the base layer.

Abstract translation: 本文件涉及形成低电阻金属栅极和数据布线的方法以及使用其制造薄膜晶体管的方法。 布线方法包括在基层上沉积金属层; 通过去除金属层的一部分来暴露基底层的一部分; 在基层中形成凹槽; 在基层的槽中形成种子层; 以及通过在形成在所述基底层的沟槽中的种子层上镀覆电镀材料来形成由种子层和镀层组成的线。