公开(公告)号：US09224965B2

公开(公告)日：2015-12-29

申请号：US14254289

申请日：2014-04-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Chang Wook Han ,  Jae Yoon Lee

IPC: H01L29/08 ,  H01L51/05 ,  H01L51/10

CPC classification number: H01L51/0512 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/105

Abstract: An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

Abstract translation: 公开了一种有机薄膜晶体管及其制造方法，其可以通过降低在有机半导体层和源极/漏极之间的接触区域中发生的接触电阻来提高器件性能。 有机薄膜晶体管包括形成在基板上的栅极电极，形成在栅电极上的栅极绝缘层，与栅极电极的两个边缘重叠并形成在栅极绝缘层上的源极和漏极电极，形成在栅极绝缘层上的有机半导体层 包括源极/漏极的栅极绝缘层，在栅极绝缘层和源极/漏极之间形成的具有亲水性的第一粘合剂层和在有机半导体层和栅极绝缘层之间形成的具有疏水性的第二粘合剂层 。

公开(公告)号：US20140225096A1

公开(公告)日：2014-08-14

申请号：US14254289

申请日：2014-04-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Chang Wook Han ,  Jae Yoon Lee

IPC: H01L51/05

CPC classification number: H01L51/0512 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/105

Abstract: An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

Abstract translation: 公开了一种有机薄膜晶体管及其制造方法，其可以通过降低在有机半导体层和源极/漏极之间的接触区域中发生的接触电阻来提高器件性能。 有机薄膜晶体管包括形成在基板上的栅极电极，形成在栅电极上的栅极绝缘层，与栅极电极的两个边缘重叠并形成在栅极绝缘层上的源极和漏极电极，形成在栅极绝缘层上的有机半导体层 包括源极/漏极的栅极绝缘层，在栅极绝缘层和源极/漏极之间形成的具有亲水性的第一粘合剂层和在有机半导体层和栅极绝缘层之间形成的具有疏水性的第二粘合剂层 。