Abstract:
Disclosed is a light emitting display device including a substrate, an auxiliary power electrode located on the substrate, a first protection layer located on the auxiliary power electrode, a second protection layer located between the first protection layer and the auxiliary power electrode, a contact portion configured to expose a part of the auxiliary power electrode through the first protection layer and the second protection layer, an eaves structure portion located at the contact portion, and a cover metal pattern located on the eaves structure portion.
Abstract:
A method of manufacturing an organic light emitting display device, the method includes forming a thin film transistor (TFT) in an active area of a substrate and forming a signal pad and a first pad electrode, connected to the signal pad, in a pad area of the substrate, forming a passivation layer on the TFT and the first pad electrode, forming a planarization layer on the passivation layer, removing a certain region of the passivation layer to simultaneously form an area, through which the TFT is exposed to the outside, and an area through which the first pad electrode is exposed to the outside, forming a first anode electrode connected to the TFT, a first auxiliary electrode spaced apart from the first anode electrode, and a second pad electrode that is connected to the first pad electrode and covers the exposed first pad electrode; and forming a second anode electrode, covering a top and a side surface of the first anode electrode, and a second auxiliary electrode covering a top and a side surface of the first auxiliary electrode.
Abstract:
Discussed are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device according to an embodiment includes a substrate including an active area and a pad area, a thin film transistor (TFT) in the active area of the substrate, an anode electrode on the TFT, an organic emission layer on the anode electrode, a cathode electrode on the organic emission layer, an auxiliary electrode connected to the cathode electrode and disposed on the same layer as the anode electrode, a signal pad in the pad area of the substrate, and a pad electrode connected to the signal pad to cover a top of the signal pad for preventing the top of the signal pad from being corroded. The TFT includes a gate electrode. The signal pad is disposed on the same layer as the gate electrode.
Abstract:
There are provided an organic light emitting display and a method of manufacturing the organic light emitting display. The organic light emitting display includes a lower substrate including a plurality of subpixel regions, a thin film transistor formed on the lower substrate, an organic light emitting element formed on the thin film transistor, an encapsulation unit for covering the organic light emitting element, a spacer formed on the encapsulation unit, an upper substrate disposed to face the lower substrate, and a desiccant between the lower substrate and the upper substrate. Various embodiments of the invention provide an organic light emitting display that enhances a viewing angle by minimizing a cell gap and minimizing a distortion of light, minimizes penetration of water or oxygen from the outside, and realizes a high resolution display by enhancing an aperture ratio, and a method of manufacturing the organic light emitting display.
Abstract:
Disclosed is an organic light emitting display apparatus in which an anode electrode, an organic emission layer, a cathode electrode, and an auxiliary electrode connected to the cathode electrode and disposed on the same layer as that of the anode electrode are disposed in an active area of the substrate, a signal pad and a pad electrode connected to the signal pad and covering a top of the signal pad are disposed in a pad area of the substrate, and a top of the pad electrode has lower oxidation rate than the top of the signal pad.
Abstract:
Disclosed is an organic light emitting display apparatus in which an anode electrode, an organic emission layer, a cathode electrode, and an auxiliary electrode connected to the cathode electrode and disposed on the same layer as that of the anode electrode are disposed in an active area of the substrate, a signal pad and a pad electrode connected to the signal pad and covering a top of the signal pad are disposed in a pad area of the substrate, and a top of the pad electrode has lower oxidation rate than the top of the signal pad.
Abstract:
Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.
Abstract:
Discussed is an organic light emitting display device in which an auxiliary electrode is disposed on an overcoating layer, and thus, an aperture ratio is enhanced. The organic light emitting display device can include a first overcoating layer disposed on a driving transistor and a supply electrode, a connection electrode disposed on the first overcoating layer and connected to the supply electrode through the second contact hole, a first electrode disposed on the first overcoating layer and connected to the driving transistor through the first contact hole, a second overcoating layer disposed on the first overcoating layer, and an auxiliary electrode disposed on the second overcoating layer and connected to the connection electrode. The first overcoating layer may include a first contact hole and a second contact hole. The second overcoating layer may cover the first and second contact holes and may not cover a portion of the first electrode.
Abstract:
Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.