公开(公告)号：US09450106B2

公开(公告)日：2016-09-20

申请号：US14750217

申请日：2015-06-25

Applicant: LG DISPLAY CO., LTD.

Inventor： Sang Kug Han ,  Ki Sul Cho ,  Choon Ho Park ,  Jin Ho Choi ,  Kuk Hwan Kim ,  Soo Hong Kim ,  Eun Ji Ham ,  Byoung Cheol Song

IPC: H01L29/04 ,  G09G3/36 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/78696 ,  H01L29/0692 ,  H01L29/42384 ,  H01L29/78609 ,  H01L29/78645 ,  H01L29/78648

Abstract: Disclosed is a thin film transistor (TFT) of a display apparatus which reduces a leakage current caused by a hump and decreases screen defects. The TFT includes an active layer and a first gate electrode with a gate insulator therebetween, and a source electrode and a drain electrode respectively disposed at both ends of the active layer. The gate electrode branches as a plurality of lines and overlaps the active layer. The active layer includes one or more channel areas between the source electrode and the drain electrode, one or more dummy areas, and a plurality of link areas between the one or more channel areas to connect the one or more channel areas in one pattern. A length of each of the one or more dummy areas extends from an edge of a corresponding channel area.

Abstract translation: 公开了一种显示装置的薄膜晶体管（TFT），其减少由隆起引起的漏电流并减少屏幕缺陷。 TFT包括有源层和在其之间具有栅极绝缘体的第一栅电极，以及分别设置在有源层的两端的源电极和漏电极。 栅极分支为多条线并与有源层重叠。 有源层包括在源电极和漏电极之间的一个或多个沟道区，一个或多个虚拟区，以及在一个或多个沟道区之间的多个连接区，用于以一个图案连接一个或多个沟道区。 一个或多个虚拟区域中的每一个的长度从对应的通道区域的边缘延伸。

公开(公告)号：US10199507B2

公开(公告)日：2019-02-05

申请号：US14011920

申请日：2013-08-28

Applicant: LG Display Co., Ltd.

Inventor： Seung Joon Jeon ,  Ki Sul Cho ,  Seong Moh Seo

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor and a method of manufacturing the same, and a display device and a method of manufacturing the same are disclosed, in which the thin film transistor substrate comprises an active layer formed on a substrate; a gate electrode controlling electron transfer within the active layer; a source electrode connected with one end area of the active layer; a drain electrode connected with the other end area of the active layer; and a light-shielding layer formed under the active layer to shield light from entering the active layer.

公开(公告)号：US20140151708A1

公开(公告)日：2014-06-05

申请号：US14011920

申请日：2013-08-28

Applicant: LG Display Co., Ltd.

Inventor： Seung Joon Jeon ,  Ki Sul Cho ,  Seong Moh Seo

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

Abstract: A thin film transistor and a method of manufacturing the same, and a display device and a method of manufacturing the same are disclosed, in which the thin film transistor substrate comprises an active layer formed on a substrate; a gate electrode controlling electron transfer within the active layer; a source electrode connected with one end area of the active layer; a drain electrode connected with the other end area of the active layer; and a light-shielding layer formed under the active layer to shield light from entering the active layer.

Abstract translation: 公开了一种薄膜晶体管及其制造方法，以及显示装置及其制造方法，其中薄膜晶体管基板包括形成在基板上的有源层; 控制有源层内电子转移的栅电极; 源电极与有源层的一个端部区域连接; 漏极，与有源层的另一端区连接; 以及形成在有源层下面以遮蔽光进入有源层的遮光层。