公开(公告)号：US11435636B2

公开(公告)日：2022-09-06

申请号：US16712007

申请日：2019-12-12

Applicant: LG DISPLAY CO., LTD.

Inventor： Kum Mi Oh ,  In Sang Jung ,  Sung Hoon Kim

IPC: H01L21/338 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362

Abstract: Discussed is a method of manufacturing a LCD device, the method including: forming a gate in each of a plurality of pixel areas on a substrate; forming a gate insulator to cover the gate; forming a semiconductor layer on the gate insulator, and forming a photoresist (PR) on the semiconductor layer; doping high-concentration impurities at the semiconductor layer by using the photoresist (PR) as a mask to form an active layer, a source, and a drain; and doping low-concentration impurities at the semiconductor layer by using the photoresist (PR) as the mask to form a lightly doped drain (LDD) between the active layer and the source and between the active layer and the drain.

公开(公告)号：US09036105B2

公开(公告)日：2015-05-19

申请号：US14078347

申请日：2013-11-12

Applicant: LG DISPLAY CO., LTD.

Inventor： Kum Mi Oh ,  Han Seok Lee ,  Hee Sun Shin

IPC: G02F1/1368 ,  G02F1/1333 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1343

CPC classification number: G02F1/13338 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/78645

Abstract: Disclosed is LCD device and a method of manufacturing the same, which increases a margin between the channel width and length (W/L) of a thin film transistor having a multi-gate structure, wherein the device comprises a substrate where a plurality of pixel regions are defined by a data line and a gate line; an active layer formed at each of a plurality of pixel regions of the substrate; a gate electrode comprising a plurality of multi-patterns overlapping with the active layer with an insulation layer therebetween; and a data electrode electrically connected to the active layer, wherein the multi-patterns are formed in straight by compensating pattern distortion of an edge portion of a gate pattern, and formed with the gate pattern which is designed to comprise a plurality of compensation patterns.

Abstract translation: 公开了LCD器件及其制造方法，其增加了具有多栅极结构的薄膜晶体管的沟道宽度和长度（W / L）之间的裕度，其中该器件包括其中多个像素 区域由数据线和栅极线限定; 形成在所述基板的多个像素区域的每一个上的有源层; 栅极电极，包括与有源层重叠的多个多重图案，其间具有绝缘层; 以及电连接到有源层的数据电极，其中多个图案通过补偿栅极图案的边缘部分的图案畸变而被直线形成，并且被形成为被设计为包括多个补偿图案的栅极图案。

公开(公告)号：US10539844B2

公开(公告)日：2020-01-21

申请号：US14699694

申请日：2015-04-29

Applicant: LG DISPLAY CO., LTD.

Inventor： Kum Mi Oh ,  In Sang Jung ,  Sung Hoon Kim

IPC: G02F1/136 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1335

Abstract: Discussed are a liquid crystal display (LCD) device and a method of manufacturing the LCD device. The LCD device can include a plurality of pixel areas defined by intersections of a plurality of gate lines and a plurality of data lines, a gate disposed in each of the plurality of pixel areas, a gate insulator disposed to cover the gate, an active layer disposed on only the gate with the gate insulator therebetween, a thin film transistor (TFT) configured to include a source, which is disposed at a first side of the active layer, and a drain disposed at a second side of the active layer, a pixel electrode connected to the drain of the TFT and configured to supply a data voltage to a corresponding pixel area, a common electrode configured to supply a common voltage to the corresponding pixel area, and a lightly doped drain (LDD) disposed between the active layer and the source and between the active layer and the drain. At least a portion of the LDD can be disposed on the gate.