公开(公告)号：US09748286B2

公开(公告)日：2017-08-29

申请号：US15073278

申请日：2016-03-17

Applicant: LG DISPLAY CO., LTD.

Inventor： Sungkeun Lee ,  Yongtae Song ,  Imkuk Kang ,  Sungjun Yun ,  Woocheol Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L29/417 ,  H01L21/02 ,  H01L21/027 ,  H01L21/4763 ,  H01L29/423

CPC classification number: H01L27/1288 ,  H01L21/02565 ,  H01L21/02639 ,  H01L21/0273 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a thin film transistor substrate, the method can include a first mask process for forming a gate electrode on a substrate; a step for forming a gate insulating layer covering the gate electrode; a second mask process for forming a source electrode overlapping with one side of the gate electrode, and a drain electrode overlapping with other side of the gate electrode and being apart from the source electrode, on the gate insulating layer; and a third mask process for forming an oxide semiconductor layer extending from the source electrode to the drain electrode, and an etch stopper having the same shape and size with the oxide semiconductor layer on the oxide semiconductor layer.

公开(公告)号：US09324736B2

公开(公告)日：2016-04-26

申请号：US14550483

申请日：2014-11-21

Applicant: LG DISPLAY CO., LTD.

Inventor： Sungkeun Lee ,  Yongtae Song ,  Imkuk Kang ,  Sungjun Yun ,  Woocheol Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L27/1288 ,  H01L21/02565 ,  H01L21/02639 ,  H01L21/0273 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure relates to a thin film transistor substrate having a metal oxide semiconductor for flat panel displays and a method for manufacturing the same. The present disclosure suggests a thin film transistor substrate including: a gate electrode on a substrate; a gate insulating layer covering the gate electrode; a source electrode overlapping with one side of the gate electrode on the gate insulating layer; a drain electrode being apart from the source electrode and overlapping with other side of the gate electrode on the gate insulating layer; an oxide semiconductor layer contacting an upper surface of the source electrode and the drain electrode, and extending from the source electrode to the drain electrode; and an etch stopper having the same shape with the oxide semiconductor layer, and contacting an upper surface of the oxide semiconductor layer.

Abstract translation: 本公开涉及具有用于平板显示器的金属氧化物半导体的薄膜晶体管基板及其制造方法。 本公开提出一种薄膜晶体管衬底，其包括：衬底上的栅电极; 覆盖栅电极的栅极绝缘层; 源电极，与所述栅极绝缘层上的所述栅电极的一侧重叠; 漏电极与源极分离并与栅极绝缘层上的栅电极的另一侧重叠; 与源电极和漏电极的上表面接触并从源极延伸到漏电极的氧化物半导体层; 以及与氧化物半导体层具有相同形状并与氧化物半导体层的上表面接触的蚀刻停止层。