公开(公告)号：US10403705B2

公开(公告)日：2019-09-03

申请号：US16128669

申请日：2018-09-12

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Hye-Seon Eom ,  Shun-Young Yang ,  Jeoung-In Lee

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

公开(公告)号：US11839114B2

公开(公告)日：2023-12-05

申请号：US17066353

申请日：2020-10-08

Applicant: LG Display Co., Ltd.

Inventor： Doo-Hyun Yoon ,  Hyoung-Su Kim ,  Hye-Seon Eom ,  Jong-Hyeok Im ,  Gyung-Min Kim

IPC: H01L27/32 ,  H10K59/121 ,  H10K50/813 ,  H10K50/818 ,  H10K50/852 ,  H10K50/86 ,  H10K59/38 ,  H10K59/122 ,  H10K102/00

CPC classification number: H10K59/1216 ,  H10K50/813 ,  H10K50/818 ,  H10K50/852 ,  H10K50/865 ,  H10K59/122 ,  H10K59/38 ,  H10K2102/3026

Abstract: The present disclosure discloses an organic light emitting display device. The organic light emitting display device includes a substrate, a driving transistor, a reflection electrode, a dielectric layer, a first and second electrode, and an organic light emitting layer. The driving transistor is in each of a plurality of pixel regions which are defined on the substrate. The reflection electrode is on the driving transistor, and is electrically connected to a gate electrode of the driving transistor. The dielectric layer is on the reflection electrode. The first electrode is on the dielectric layer, and is electrically connected to a source electrode of the driving transistor, and faces the reflection electrode. The organic light emitting layer is on the first electrode. The second electrode is on the organic light emitting layer.

公开(公告)号：US10103213B2

公开(公告)日：2018-10-16

申请号：US15247414

申请日：2016-08-25

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Hye-Seon Eom ,  Shun-Young Yang ,  Jeoung-In Lee

IPC: H01L27/32 ,  H01L51/56

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

公开(公告)号：US10084030B2

公开(公告)日：2018-09-25

申请号：US15581763

申请日：2017-04-28

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Hye-Seon Eom

IPC: H01L27/32 ,  H01L49/02

CPC classification number: H01L27/3265 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L28/60

Abstract: Disclosed are a backplane substrate which secures sufficient storage capacitance even when using small sub-pixels in a structure having very high resolution, and an organic light emitting diode display using the same. The backplane substrate includes storage capacitors including a first storage electrode, a second storage electrode partially overlapping the first storage electrode, a second storage connection electrode overlapping the first and second storage electrodes and connected to the second storage electrode at a first node, and a first storage connection electrode overlapping the second storage connection electrode and connected to the first storage electrode at a second node at which the first and second storage electrodes do not overlap each other, in a storage capacitor region defined by intersecting a scan line, a first voltage line and a data line at each sub-pixel.

公开(公告)号：US20170062545A1

公开(公告)日：2017-03-02

申请号：US15247414

申请日：2016-08-25

Applicant: LG Display Co., Ltd.

Inventor： KUM-MI OH ,  Hye-Seon Eom ,  Shun-Young Yang ,  Jeoung-In Lee

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3276 ,  H01L27/3246 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/56 ,  H01L2227/323

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

Abstract translation: 公开了能够实现具有足够的存储容量的像素内整合设计的有机发光显示装置及其制造方法，其中有机发光显示装置包括连接到驱动栅电极的第一有源层和数据 并且与第一有源层间隔开的第二有源层，同时与驱动栅电极重叠并连接到电流驱动线和存储电极。

公开(公告)号：US20160336419A1

公开(公告)日：2016-11-17

申请号：US15154400

申请日：2016-05-13

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi Oh ,  Hye-Seon Eom ,  Shun-Young Yang ,  Jeoung-In Lee

IPC: H01L29/423 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/42384 ,  H01L27/1222 ,  H01L27/1285 ,  H01L29/78678 ,  H01L29/78696

Abstract: A thin film transistor includes a gate electrode on a substrate. The gate electrode includes a flat portion and an inclined portion at a side of the flat portion. A ratio of a height to a width (height/width) of the inclined portion is 1.192 or less. The thin film transistor also includes a gate insulating layer disposed on the substrate to cover the gate electrode and a polysilicon active layer on the gate insulating layer and over the gate electrode. The thin film transistor further includes a source electrode and a drain electrode respectively connected to two opposite end portions of the polysilicon active layer.

Abstract translation: 薄膜晶体管包括在基板上的栅电极。 栅极电极在平坦部分的一侧包括平坦部分和倾斜部分。 倾斜部的高度与宽度（高/宽）的比为1.192以下。 薄膜晶体管还包括设置在基板上以覆盖栅电极的栅极绝缘层和栅极绝缘层上以及栅极上的多晶硅有源层。 薄膜晶体管还包括分别连接到多晶硅有源层的两个相对端部的源电极和漏电极。