公开(公告)号：US10263060B2

公开(公告)日：2019-04-16

申请号：US15652955

申请日：2017-07-18

Applicant: LG DISPLAY CO., LTD.

Inventor： SoYoung Noh ,  JinChae Jeon ,  HyunSoo Shin

IPC: H01L27/32 ,  H01L51/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423

Abstract: Different types of thin film transistors are disposed on the same flexible substrate and an organic light emitting display using the same includes a display area and a non-display area; a first buffer layer over an entire surface of the flexible substrate; a driving transistor on the buffer layer in the display area, the driving transistor including a polycrystalline silicon (LTPS) layer, a first gate electrode, a first source electrode, and a first drain electrode; a capacitor electrode on the first source electrode of the driving transistor and forming a storage capacitor together with the first source electrode; a switching transistor in the display area to be spaced apart from the driving transistor; and a dummy electrode on the switching transistor, the dummy electrode formed of the same material as the capacitor electrode, and disposed on the same plane as the capacitor.

公开(公告)号：US11063068B2

公开(公告)日：2021-07-13

申请号：US16575917

申请日：2019-09-19

Applicant: LG Display Co., Ltd.

Inventor： JinChae Jeon ,  SoYoung Noh ,  UiJin Chung ,  Eunsung Kim ,  HyunSoo Shin ,  Wonkyung Kim ,  Jeihyun Lee

IPC: H01L27/12

Abstract: A display apparatus includes a substrate having a first substrate, a second substrate, and an inorganic insulating layer between the first substrate and the second substrate. A first buffer layer is on the substrate, wherein the first buffer layer includes n+1 layers, and ‘n’ is 0 or an even number. A first thin film transistor, a second thin film transistor, and a storage capacitor are each on the first buffer layer. The first thin film transistor includes a first active layer formed of a low temperature poly silicon material. The second thin film transistor includes a second active layer formed of an oxide semiconductor material. The storage capacitor includes a first capacitor electrode and a second capacitor electrode.

公开(公告)号：US09379170B2

公开(公告)日：2016-06-28

申请号：US14920642

申请日：2015-10-22

Applicant: LG DISPLAY CO., LTD.

Inventor： KiSul Cho ,  JinChae Jeon

IPC: H01L27/15 ,  H01J1/62 ,  H01L27/32 ,  H01L51/00 ,  H01L27/12

CPC classification number: H01L27/3272 ,  H01L27/1288 ,  H01L27/322 ,  H01L27/3244 ,  H01L51/0001

Abstract: An organic light emitting diode (OLED) display device can include a gate line including a gate electrode; an active layer over the gate line with a gate insulating layer interposed therebetween and including an amorphous zinc oxide semiconductor; a first protective layer over color filters on an insulating layer over first source and drain electrodes; second source and drain electrodes on the first protective layer and connected to the first source and drain electrodes; a second protective layer having a third contact hole; a pixel electrode on the second protective layer and connected to the second drain electrode through the third contact hole; a partition partitioning the pixel region; and an organic light emitting layer over the partition. Also, the gate electrode is located to cover a lower portion of the active layer and the second source electrode is extended to cover the channel region of the active layer.

Abstract translation: 有机发光二极管（OLED）显示装置可以包括包括栅电极的栅极线; 栅极线上的有源层，栅极绝缘层介于其间并且包括无定形氧化锌半导体; 在第一源极和漏极上的绝缘层上的滤色器上的第一保护层; 在第一保护层上的第二源极和漏极，并连接到第一源极和漏极; 具有第三接触孔的第二保护层; 第二保护层上的像素电极，并通过第三接触孔与第二漏电极连接; 划分像素区域的分区; 以及在隔板上方的有机发光层。 此外，栅电极被定位成覆盖有源层的下部，并且第二源极延伸以覆盖有源层的沟道区。

公开(公告)号：US09312322B2

公开(公告)日：2016-04-12

申请号：US13720651

申请日：2012-12-19

Applicant: LG DISPLAY CO., LTD.

Inventor： KiSul Cho ,  JinChae Jeon

IPC: H01L27/32 ,  H01L51/00 ,  H01L27/12

CPC classification number: H01L27/3272 ,  H01L27/1288 ,  H01L27/322 ,  H01L27/3244 ,  H01L51/0001

Abstract: An organic light emitting diode (OLED) display device in which an oxide-based semiconductor is used as an active layer of a TFT and the fabrication method thereof are provided. In the OLED display device, the active layer is formed at an upper portion of the gate electrode and a source electrode is patterned to completely cover the channel region of the active layer, to block light introduced from upper and lower portions of the active layer, thereby improving reliability of the oxide TFT.

Abstract translation: 提供一种有机发光二极管（OLED）显示装置，其中使用氧化物基半导体作为TFT的有源层及其制造方法。 在OLED显示装置中，有源层形成在栅电极的上部，并且源电极被图案化以完全覆盖有源层的沟道区，以阻挡从有源层的上部和下部引入的光， 从而提高氧化物TFT的可靠性。