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    Hybrid thin film transistor and organic light emitting display device using the same
    2.
    发明授权
    Hybrid thin film transistor and organic light emitting display device using the same 有权

    公开(公告)号：US10263060B2

    公开(公告)日：2019-04-16

    申请号：US15652955

    申请日：2017-07-18

    申请人： LG DISPLAY CO., LTD.

    发明人： SoYoung Noh ,  JinChae Jeon ,  HyunSoo Shin

    IPC分类号： H01L27/32 ,  H01L51/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423

    摘要： Different types of thin film transistors are disposed on the same flexible substrate and an organic light emitting display using the same includes a display area and a non-display area; a first buffer layer over an entire surface of the flexible substrate; a driving transistor on the buffer layer in the display area, the driving transistor including a polycrystalline silicon (LTPS) layer, a first gate electrode, a first source electrode, and a first drain electrode; a capacitor electrode on the first source electrode of the driving transistor and forming a storage capacitor together with the first source electrode; a switching transistor in the display area to be spaced apart from the driving transistor; and a dummy electrode on the switching transistor, the dummy electrode formed of the same material as the capacitor electrode, and disposed on the same plane as the capacitor.

    Thin Film Transistor Array, Fabrication Method Thereof, and Display Apparatus Comprising the Thin Film Transistor Array
    4.
    发明申请
    Thin Film Transistor Array, Fabrication Method Thereof, and Display Apparatus Comprising the Thin Film Transistor Array 有权

    公开(公告)号：US20230073848A1

    公开(公告)日：2023-03-09

    申请号：US17901702

    申请日：2022-09-01

    申请人： LG Display Co., Ltd.

    发明人： KyeongJu Moon ,  SoYoung Noh

    IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/32

    摘要： Disclosed is a thin film transistor array comprising a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer including an oxide semiconductor on the substrate, the first active layer includes a first channel portion, a first conductor portion, and a first middle portion between the first channel portion and the first conductor portion, the second thin film transistor includes a second active layer including an oxide semiconductor on the substrate, the second active layer includes a second channel portion, a second conductor portion, and a second middle portion between the second channel portion and the second conductor portion, and resistivity of the first conductor portion of the first thin film transistor is greater than resistivity of the second conductor portion of the second thin film transistor.

    Display apparatus
    5.
    发明授权
    Display apparatus 有权

    公开(公告)号：US11063068B2

    公开(公告)日：2021-07-13

    申请号：US16575917

    申请日：2019-09-19

    申请人： LG Display Co., Ltd.

    发明人： JinChae Jeon ,  SoYoung Noh ,  UiJin Chung ,  Eunsung Kim ,  HyunSoo Shin ,  Wonkyung Kim ,  Jeihyun Lee

    IPC分类号： H01L27/12

    摘要： A display apparatus includes a substrate having a first substrate, a second substrate, and an inorganic insulating layer between the first substrate and the second substrate. A first buffer layer is on the substrate, wherein the first buffer layer includes n+1 layers, and ‘n’ is 0 or an even number. A first thin film transistor, a second thin film transistor, and a storage capacitor are each on the first buffer layer. The first thin film transistor includes a first active layer formed of a low temperature poly silicon material. The second thin film transistor includes a second active layer formed of an oxide semiconductor material. The storage capacitor includes a first capacitor electrode and a second capacitor electrode.