Abstract:
A white light emitting device and a display device using the same which can prevent a change in luminance due to change in viewing angle, improve color deviation, and lower a driving voltage at the same time, through a change in an internal stack structure and a thickness an emission-side electrode with regard to a vertical distance from a lower surface of the first electrode to a lower surface of the second electrode.
Abstract:
Disclosed is a light emitting device that is capable of reducing lateral leakage current and a driving voltage by improving a structure for connecting a plurality of stacks to one another in a structure using the plurality of stacks, and a light emitting display device including the same. The light emitting device includes a first electrode and a second electrode facing each other, a plurality of stacks provided between the first electrode and the second electrode, and a charge generation layer including an electron generation layer and a hole generation layer stacked between the stacks, wherein the electron generation layer contains a first host of Formula 1 and a metal dopant, and the hole generation layer contains a second host and an organic dopant.
Abstract:
A host material is disclosed. The host material, as a compound which is represented by the following formula 1, has a chemical structure in which nitrogen and silicon atoms are chemically and directly bonded to each other. Wherein the “a” is one selected from a material group which includes N, S, O, SO2 and NSiG1G2G3, and the “G1, G2 and G3” each become one of a hydrogen, and aromatic, heterocyclic and aliphatic groups which are or not substituted, respectively.
Abstract translation:公开了主体材料。 作为由下式1表示的化合物的主体材料具有其中氮和硅原子彼此化学且直接键合的化学结构。 其中,“a”是选自包括N,S,O,SO 2和NSiG 1 G 2 G 3的材料组中的一个,“G1,G2和G3”各自成为氢之一,芳族,杂环和脂族基是 没有被替代。
Abstract:
Disclosed are a light-emitting device and a display device including the same. An emissive layer is formed so as to have a dual-layer structure, the triplet energy level of a dopant of a first emissive layer adjacent to a hole transport layer is greater than the triplet energy level of a first host in the first emissive layer, and the triplet energy level of the first host is greater than the triplet energy level of a second host of a second emissive layer, whereby triplet excitons generated in the first emissive layer are recycled to the second emissive layer so as to be reused for light emission.
Abstract:
Disclosed are a light-emitting device and a display device including the same. An emissive layer is formed so as to have a dual-layer structure, the triplet energy level of a dopant of a first emissive layer adjacent to a hole transport layer is greater than the triplet energy level of a first host in the first emissive layer, and the triplet energy level of the first host is greater than the triplet energy level of a second host of a second emissive layer, whereby triplet excitons generated in the first emissive layer are recycled to the second emissive layer so as to be reused for light emission.
Abstract:
A light emitting device is capable of improving the efficiency in the visible light wavelength in a structure in which light extraction efficiency is improved through a microlens array. The light emitting display device includes a substrate having a plurality of subpixels, each comprising a light emitting region and a non-light emitting region, an over-coating layer having irregularities on a surface thereof in at least the light emitting region, and a light emitting device disposed on the surface of the over-coating layer, the light emitting device comprising an anode and a cathode facing each other, and at least two blue stacks and a phosphorescent stack between the anode and the cathode, at least one of the blue stacks is the blue light emitting layer and includes an electron transport layer including a first material, the electron transport layer being in contact with the blue light emitting layer.
Abstract:
A light emitting device and a light emitting display device that are capable of improving efficiency, driving voltage, and lifespan by varying the configuration of a layer adjacent to a blue light emitting layer in a blue fluorescent stack contacting a cathode are disclosed. The light emitting device includes stacks between an anode and a cathode, wherein an nth stack contacting the cathode is a first blue stack that includes a first hole transport layer, a first electron-blocking layer, a first blue light emitting layer containing a boron-based dopant having an emission peak of 430 nm to 480 nm, a first electron transport layer contacting the first blue light emitting layer, and an electron injection layer having two sides contacting the first electron transport layer and the cathode, respectively, wherein the first electron transport layer contains a mixture of a first material and a second material.