公开(公告)号：US09252268B2

公开(公告)日：2016-02-02

申请号：US14475182

申请日：2014-09-02

Applicant: LG DISPLAY CO., LTD.

Inventor： Jeong-Hwan Kim ,  Ki-Sul Cho

IPC: H01L29/04 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/036 ,  H01L29/78 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L29/7831 ,  H01L27/1222 ,  H01L27/1244 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78648

Abstract: The present invention provides a display device and a dual gate type thin film transistor (TFT) structure for an electronic device. According to an embodiment, the dual gate TFT structure includes a first gate electrode formed on a substrate; a semiconductor layer formed on the first gate electrode; an insulating layer formed on the semiconductor layer, and including first, second and third contact holes therein; drain and source electrodes in contact with the semiconductor layer respectively through the first and second contact holes; a passivation layer formed on the drain electrode and the source electrode, and including a fourth contact hole therein; a planarization layer formed on the passivation layer, and including a fifth contact hole therein; and a second gate electrode formed on the planarization layer, and in electrical contact with the first gate electrode through the third, fourth and fifth contact holes.

Abstract translation: 本发明提供了一种用于电子设备的显示装置和双栅型薄膜晶体管（TFT）结构。 根据实施例，双栅极TFT结构包括形成在衬底上的第一栅电极; 形成在所述第一栅电极上的半导体层; 形成在半导体层上的绝缘层，其中包括第一，第二和第三接触孔; 漏极和源极分别通过第一和第二接触孔与半导体层接触; 钝化层，形成在所述漏电极和所述源电极上，并且在其中包括第四接触孔; 平坦化层，形成在所述钝化层上，并且在其中包括第五接触孔; 以及第二栅电极，形成在平坦化层上，并且通过第三，第四和第五接触孔与第一栅电极电接触。

公开(公告)号：US09761644B2

公开(公告)日：2017-09-12

申请号：US15294222

申请日：2016-10-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Jae-Hun Jeong ,  Ki-Sul Cho

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/417 ,  H01L51/56 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L27/3248 ,  H01L27/1214 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/42384 ,  H01L51/5209 ,  H01L51/5237 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/568

Abstract: An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (TFTs) including at least one switching TFT and at least one driving TFT in each element region; a planarization layer on the plurality of TFTs; a first electrode on the planarization layer and including first to third portions connected to one another, wherein the first and second portions are at each pixel region, and the third portion is at a neighboring pixel region; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein an end of the third portion overlaps the driving TFT of the neighboring pixel region.

公开(公告)号：US09583548B2

公开(公告)日：2017-02-28

申请号：US14508053

申请日：2014-10-07

Applicant: LG Display Co., Ltd.

Inventor： Mi-Kyung Park ,  Ki-Sul Cho ,  Jeong-Hwan Kim ,  Ki-Su Park

IPC: H01L27/32

CPC classification number: H01L27/3272 ,  H01L27/322 ,  H01L27/3276

Abstract: Provided are an organic light emitting display (OLED) device and method for manufacturing the same. The OLED device includes: a plurality of gate lines in one direction on a substrate, a plurality of light-shielding patterns corresponding to at least parts of peripheries of the respective pixel regions on the substrate, the light-shielding patterns spaced apart from the gate lines, at least one insulating film covering the substrate, the gate lines, and the light-shielding patterns, a plurality of data lines in another direction crossing the gate lines on the insulating film to define the pixel areas, a passivation film covering the insulating film and the data lines, a plurality of color filters in the pixel areas on the passivation film, an over-coating film evenly covering the passivation film and covering the color filters, and a plurality of organic light emitting elements in the pixel areas on the over-coating film.

Abstract translation: 提供了一种有机发光显示（OLED）装置及其制造方法。 OLED器件包括：在衬底上的一个方向上的多条栅极线，与衬底上各个像素区域的周边的至少一部分相对应的多个光屏蔽图案，与栅极间隔开的光屏蔽图案 线，至少一层覆盖衬底的绝缘膜，栅极线和遮光图案，在与绝缘膜上的栅极线交叉的另一方向上的多条数据线，以限定像素区域;覆盖绝缘层的钝化膜 膜和数据线，钝化膜上的像素区域中的多个滤色器，均匀覆盖钝化膜并覆盖滤色器的覆盖膜，以及多个有机发光元件 过涂膜。

公开(公告)号：US09508828B2

公开(公告)日：2016-11-29

申请号：US13875509

申请日：2013-05-02

Applicant: LG Display Co., Ltd.

Inventor： Ki-Sul Cho ,  Jin-Chae Jeon

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/7869

Abstract: A method of fabricating an array substrate includes forming a first metal layer, a gate insulating material layer and an oxide semiconductor material layer on a substrate; heat-treating the substrate having the oxide semiconductor material layer at a temperature of about 300 degrees Celsius to about 500 degrees Celsius; patterning the oxide semiconductor material layer, the gate insulating material layer and the first metal layer, thereby forming a gate electrode, a gate insulating layer and an oxide semiconductor layer; forming a gate line connected to the gate electrode and made of low resistance metal material; forming source and drain electrodes, a data line and a pixel electrode, the source and drain electrodes and the data line having a double-layered structure of a transparent conductive material layer and a low resistance metal material layer, the pixel electrode made of the transparent conductive material layer.

Abstract translation: 制造阵列基板的方法包括在基板上形成第一金属层，栅绝缘材料层和氧化物半导体材料层; 在约300摄氏度至约500摄氏度的温度下热处理具有氧化物半导体材料层的衬底; 图案化氧化物半导体材料层，栅极绝缘材料层和第一金属层，从而形成栅电极，栅极绝缘层和氧化物半导体层; 形成连接到栅电极并由低电阻金属材料制成的栅极线; 形成源极和漏极，数据线和像素电极，源极和漏极以及具有透明导电材料层和低电阻金属材料层的双层结构的数据线，由透明 导电材料层。

公开(公告)号：US09502487B2

公开(公告)日：2016-11-22

申请号：US14463175

申请日：2014-08-19

Applicant: LG Display Co., Ltd.

Inventor： Jae-Hun Jeong ,  Ki-Sul Cho

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3248 ,  H01L27/1214 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/42384 ,  H01L51/5209 ,  H01L51/5237 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/568

Abstract: An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (TFTs) including at least one switching TFT and at least one driving TFT in each element region; a planarization layer on the plurality of TFTs; a first electrode on the planarization layer and including first to third portions connected to one another, wherein the first and second portions are at each pixel region, and the third portion is at a neighboring pixel region; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein an end of the third portion overlaps the driving TFT of the neighboring pixel region.

Abstract translation: 一种有机电致发光器件，包括：具有发光区域和元件区域的多个像素区域的衬底; 在每个元件区域中包括至少一个开关TFT和至少一个驱动TFT的多个薄膜晶体管（TFT）; 所述多个TFT上的平坦化层; 平坦化层上的第一电极，并且包括彼此连接的第一至第三部分，其中第一和第二部分在每个像素区域处，并且第三部分在相邻的像素区域; 在第一电极上的有机发光层; 以及有机发光层上的第二电极，其中第三部分的一端与相邻像素区域的驱动TFT重叠。

公开(公告)号：US20150187856A1

公开(公告)日：2015-07-02

申请号：US14508053

申请日：2014-10-07

Applicant: LG Display Co., Ltd.

Inventor： Mi-Kyung Park ,  Ki-Sul Cho ,  Jeong-Hwan Kim ,  Ki-Su Park

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/56

CPC classification number: H01L27/3272 ,  H01L27/322 ,  H01L27/3276

Abstract: Provided are an organic light emitting display (OLED) device and method for manufacturing the same. The OLED device includes: a plurality of gate lines in one direction on a substrate, a plurality of light-shielding patterns corresponding to at least parts of peripheries of the respective pixel regions on the substrate, the light-shielding patterns spaced apart from the gate lines, at least one insulating film covering the substrate, the gate lines, and the light-shielding patterns, a plurality of data lines in another direction crossing the gate lines on the insulating film to define the pixel areas, a passivation film covering the insulating film and the data lines, a plurality of color filters in the pixel areas on the passivation film, an over-coating film evenly covering the passivation film and covering the color filters, and a plurality of organic light emitting elements in the pixel areas on the over-coating film.

Abstract translation: 提供了一种有机发光显示（OLED）装置及其制造方法。 OLED器件包括：在衬底上的一个方向上的多条栅极线，与衬底上各个像素区域的周边的至少一部分相对应的多个光屏蔽图案，与栅极间隔开的光屏蔽图案 线，至少一层覆盖衬底的绝缘膜，栅极线和遮光图案，在与绝缘膜上的栅极线交叉的另一方向上的多条数据线，以限定像素区域;覆盖绝缘层的钝化膜 膜和数据线，钝化膜上的像素区域中的多个滤色器，均匀覆盖钝化膜并覆盖滤色器的覆盖膜，以及多个有机发光元件 过涂膜。

公开(公告)号：US20130292768A1

公开(公告)日：2013-11-07

申请号：US13875509

申请日：2013-05-02

Applicant: LG DISPLAY CO., LTD.

Inventor： Ki-Sul Cho ,  Jin-Chae Jeon

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/7869

Abstract: A method of fabricating an array substrate includes forming a first metal layer, a gate insulating material layer and an oxide semiconductor material layer on a substrate; heat-treating the substrate having the oxide semiconductor material layer at a temperature of about 300 degrees Celsius to about 500 degrees Celsius; patterning the oxide semiconductor material layer, the gate insulating material layer and the first metal layer, thereby forming a gate electrode, a gate insulating layer and an oxide semiconductor layer; forming a gate line connected to the gate electrode and made of low resistance metal material; forming source and drain electrodes, a data line and a pixel electrode, the source and drain electrodes and the data line having a double-layered structure of a transparent conductive material layer and a low resistance metal material layer, the pixel electrode made of the transparent conductive material layer.

Abstract translation: 制造阵列基板的方法包括在基板上形成第一金属层，栅绝缘材料层和氧化物半导体材料层; 在约300摄氏度至约500摄氏度的温度下热处理具有氧化物半导体材料层的衬底; 图案化氧化物半导体材料层，栅极绝缘材料层和第一金属层，从而形成栅电极，栅极绝缘层和氧化物半导体层; 形成连接到栅电极并由低电阻金属材料制成的栅极线; 形成源极和漏极，数据线和像素电极，源极和漏极以及具有透明导电材料层和低电阻金属材料层的双层结构的数据线，由透明 导电材料层。