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1.发明授权公开(公告)号：US09583548B2
公开(公告)日：2017-02-28
申请号：US14508053
申请日：2014-10-07
Applicant: LG Display Co., Ltd.
Inventor： Mi-Kyung Park , Ki-Sul Cho , Jeong-Hwan Kim , Ki-Su Park
IPC: H01L27/32
CPC classification number: H01L27/3272 , H01L27/322 , H01L27/3276
Abstract: Provided are an organic light emitting display (OLED) device and method for manufacturing the same. The OLED device includes: a plurality of gate lines in one direction on a substrate, a plurality of light-shielding patterns corresponding to at least parts of peripheries of the respective pixel regions on the substrate, the light-shielding patterns spaced apart from the gate lines, at least one insulating film covering the substrate, the gate lines, and the light-shielding patterns, a plurality of data lines in another direction crossing the gate lines on the insulating film to define the pixel areas, a passivation film covering the insulating film and the data lines, a plurality of color filters in the pixel areas on the passivation film, an over-coating film evenly covering the passivation film and covering the color filters, and a plurality of organic light emitting elements in the pixel areas on the over-coating film.
Abstract translation: 提供了一种有机发光显示（OLED）装置及其制造方法。 OLED器件包括：在衬底上的一个方向上的多条栅极线，与衬底上各个像素区域的周边的至少一部分相对应的多个光屏蔽图案，与栅极间隔开的光屏蔽图案 线，至少一层覆盖衬底的绝缘膜，栅极线和遮光图案，在与绝缘膜上的栅极线交叉的另一方向上的多条数据线，以限定像素区域;覆盖绝缘层的钝化膜 膜和数据线，钝化膜上的像素区域中的多个滤色器，均匀覆盖钝化膜并覆盖滤色器的覆盖膜，以及多个有机发光元件 过涂膜。
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2.发明申请公开(公告)号：US20150187856A1
公开(公告)日：2015-07-02
申请号：US14508053
申请日：2014-10-07
Applicant: LG Display Co., Ltd.
Inventor： Mi-Kyung Park , Ki-Sul Cho , Jeong-Hwan Kim , Ki-Su Park
CPC classification number: H01L27/3272 , H01L27/322 , H01L27/3276
Abstract: Provided are an organic light emitting display (OLED) device and method for manufacturing the same. The OLED device includes: a plurality of gate lines in one direction on a substrate, a plurality of light-shielding patterns corresponding to at least parts of peripheries of the respective pixel regions on the substrate, the light-shielding patterns spaced apart from the gate lines, at least one insulating film covering the substrate, the gate lines, and the light-shielding patterns, a plurality of data lines in another direction crossing the gate lines on the insulating film to define the pixel areas, a passivation film covering the insulating film and the data lines, a plurality of color filters in the pixel areas on the passivation film, an over-coating film evenly covering the passivation film and covering the color filters, and a plurality of organic light emitting elements in the pixel areas on the over-coating film.
Abstract translation: 提供了一种有机发光显示（OLED）装置及其制造方法。 OLED器件包括：在衬底上的一个方向上的多条栅极线，与衬底上各个像素区域的周边的至少一部分相对应的多个光屏蔽图案，与栅极间隔开的光屏蔽图案 线，至少一层覆盖衬底的绝缘膜，栅极线和遮光图案，在与绝缘膜上的栅极线交叉的另一方向上的多条数据线，以限定像素区域;覆盖绝缘层的钝化膜 膜和数据线，钝化膜上的像素区域中的多个滤色器，均匀覆盖钝化膜并覆盖滤色器的覆盖膜，以及多个有机发光元件 过涂膜。
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公开(公告)号：US20190103572A1
公开(公告)日：2019-04-04
申请号：US16135424
申请日：2018-09-19
Applicant: LG Display Co., Ltd
Inventor： Mi-Kyung Park , Young-Wook Kim , Ji-Su Han
Abstract: An organic light-emitting diode (OLED) display device includes a substrate; a light-emitting diode including a first electrode, an organic emitting layer and a second electrode and disposed on a first side of the substrate; and a foamed polymer layer disposed on a second side of the substrate and including a polymer resin and an air pocket inside the polymer resin.
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公开(公告)号：US08610128B2
公开(公告)日：2013-12-17
申请号：US13849906
申请日：2013-03-25
Applicant: LG Display Co., Ltd.
Inventor： Gee-Sung Chae , Mi-Kyung Park
IPC: H01L21/336 , H01L33/00
CPC classification number: H01L27/1222 , B82Y10/00 , H01L27/1214 , H01L27/127 , H01L29/0665 , H01L29/0673 , H01L29/41733 , H01L29/4908 , H01L29/66757 , H01L29/775 , H01L29/78696 , Y10S977/762
Abstract: A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.
Abstract translation: 薄膜晶体管包括：衬底上的硅纳米线，所述硅纳米线具有中心部分和所述中心部分的两个侧部; 中心部分上的栅电极; 以及源极电极和漏极电极，分别与两个侧部分上的源电极间隔开，源电极和漏电极分别与硅纳米线电连接。
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