公开(公告)号：US11489130B2

公开(公告)日：2022-11-01

申请号：US17023809

申请日：2020-09-17

Applicant: LG DISPLAY CO., LTD.

Inventor： Jeong-Eun Won ,  Seul-Gi Choi

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/00

Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode and a second electrode facing each other; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron transporting layer positioned between the QD emitting material layer and the second electrode and including an electron-property material and a hole-property material.

公开(公告)号：US11489092B2

公开(公告)日：2022-11-01

申请号：US16668202

申请日：2019-10-30

Applicant: LG Display Co., Ltd.

Inventor： Kyung-Kook Jang ,  Jong-Kwan Bin ,  Seul-Gi Choi ,  Tae-Yang Lee

IPC: H01L33/50 ,  G02F1/1335 ,  H01L51/50 ,  H01L27/32 ,  H01L51/52 ,  C09K11/06 ,  C09K11/88 ,  C09K11/70 ,  C09K11/56 ,  G02F1/13357 ,  H01L51/00 ,  G02F1/1368 ,  H01L51/56

Abstract: A quantum-dot (QD) film, which includes a first QD layer including a first QD; and a first protection layer on the first QD layer and including a first organic compound, wherein the first organic compound includes at least two thiol groups, and a first one of the at least two thiol groups is anchored to the first QD, and an LED package, a QD light emitting diode and a display device including the QD film are provided.

公开(公告)号：US10566564B2

公开(公告)日：2020-02-18

申请号：US16160486

申请日：2018-10-15

Applicant: LG Display Co., Ltd.

Inventor： Tae-Yang Lee ,  Seul-Gi Choi ,  Min-Surk Hyung

IPC: H01L51/50 ,  H01L51/52 ,  H01L27/32 ,  G09G3/3225

Abstract: A light emitting diode and a light emitting display device are disclosed. The light emitting diode includes a first electrode and a second electrode facing each other; and a hole transporting layer between the first electrode and the second electrode, wherein the hole transporting layer includes an inorganic compound of a chemical formula 1, A:M1:M2, where the A is a semiconductor nano particle or a nano inorganic particle selected from a metal oxide group, and the M1 and M2 are different from each other and represent metal positive ions which the A is doped with.