公开(公告)号：US11894384B2

公开(公告)日：2024-02-06

申请号：US17876371

申请日：2022-07-28

Applicant: LG Display Co., Ltd.

Inventor： Ki-Tae Kim ,  So-Young Noh ,  Ui-Jin Chung ,  Kyeong-Ju Moon ,  Hyuk Ji

IPC: H01L27/12 ,  H01L27/15 ,  H01L33/62 ,  H01L29/786 ,  H01L33/54 ,  H01L29/49

CPC classification number: H01L27/1214 ,  H01L27/1225 ,  H01L27/156 ,  H01L29/4908 ,  H01L29/7869 ,  H01L29/78606 ,  H01L29/78696 ,  H01L33/54 ,  H01L33/62

Abstract: A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.

公开(公告)号：US11437407B2

公开(公告)日：2022-09-06

申请号：US17119184

申请日：2020-12-11

Applicant: LG Display Co., Ltd.

Inventor： Ki-Tae Kim ,  So-Young Noh ,  Ui-Jin Chung ,  Kyeong-Ju Moon ,  Hyuk Ji

IPC: H01L27/12 ,  H01L27/15 ,  H01L33/62 ,  H01L29/786 ,  H01L33/54

Abstract: A display apparatus in which a thin film transistor includes an oxide semiconductor pattern is disclosed. A gate electrode of the thin film transistor can overlap a channel region of the oxide semiconductor pattern. The gate electrode can have a structure in which a hydrogen barrier layer and a low-resistance electrode layer are stacked. A light-emitting device and an encapsulating element can be sequentially stacked on the thin film transistor. A thickness of the hydrogen barrier layer can be determined by a content of hydrogen per unit area of the encapsulating element. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to hydrogen diffused from the encapsulating element can be prevented.