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11 条记录 (耗时 0.019 秒)

    Display Device
    1.
    发明申请
    Display Device 有权

    公开(公告)号：US20230035377A1

    公开(公告)日：2023-02-02

    申请号：US17964805

    申请日：2022-10-12

    申请人： LG Display Co., Ltd.

    发明人： Kyoung-Nam LIM ,  Yu-Ho JUNG ,  Dong-Young KIM

    IPC分类号： H01L27/32 ,  H01L27/12 ,  H01L51/00

    摘要： Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

    Display Device
    2.
    发明申请
    Display Device 有权

    公开(公告)号：US20210104591A1

    公开(公告)日：2021-04-08

    申请号：US17125912

    申请日：2020-12-17

    申请人： LG Display Co., Ltd.

    发明人： Kyoung-Nam LIM ,  Yu-Ho JUNG ,  Dong-Young KIM

    IPC分类号： H01L27/32 ,  H01L27/12 ,  H01L51/00

    摘要： Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

    Display Device
    5.
    发明申请
    Display Device 有权

    公开(公告)号：US20230022587A1

    公开(公告)日：2023-01-26

    申请号：US17953571

    申请日：2022-09-27

    申请人： LG Display Co., Ltd.

    发明人： Kyoung-Nam LIM ,  Yu-Ho JUNG ,  Dong-Young KIM

    IPC分类号： H01L27/32 ,  H01L51/00

    摘要： Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

    Display Device
    6.
    发明申请
    Display Device 有权

    公开(公告)号：US20220344626A1

    公开(公告)日：2022-10-27

    申请号：US17861918

    申请日：2022-07-11

    申请人： LG Display Co., Ltd.

    发明人： Kyoung-Nam LIM ,  Yu-Ho JUNG ,  Dong-Young KIM

    IPC分类号： H01L51/56 ,  H01L51/00 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786

    摘要： Disclosed is a display device that is capable of realizing low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, thereby realizing low power consumption, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified.

    Display Device
    7.
    发明申请
    Display Device 审中-公开

    公开(公告)号：US20190189721A1

    公开(公告)日：2019-06-20

    申请号：US16206820

    申请日：2018-11-30

    申请人： LG Display Co., Ltd.

    发明人： Dong-Young KIM ,  Kyoung-Nam LIM ,  Yu-Ho JUNG

    IPC分类号： H01L27/32

    CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675 ,  H01L29/7869

    摘要： A display device is capable of realizing low power consumption since a first thin-film transistor having a polycrystalline semiconductor layer and a second thin-film transistor having an oxide semiconductor layer are disposed in an active area. In addition, an opening formed in a bending area is formed to have the same depth as at least one of a plurality of contact holes formed in at least one inorganic insulation layer, which is disposed in the active area, and source and drain electrodes of the second thin-film transistor and source and drain electrodes of the first thin-film transistor, which are disposed below the oxide semiconductor layer, are formed in the same plane using the same material, which simplifies the manufacturing process of the display device.

    Display Device
    8.
    发明申请
    Display Device 有权

    公开(公告)号：US20220262884A1

    公开(公告)日：2022-08-18

    申请号：US17735797

    申请日：2022-05-03

    申请人： LG Display Co., Ltd.

    发明人： Dong-Young KIM ,  Kyoung-Nam LIM ,  Yu-Ho JUNG

    IPC分类号： H01L27/32 ,  H01L27/12 ,  H01L51/00 ,  G09G3/3266 ,  G09G3/3291 ,  H01L51/50 ,  H01L29/786

    摘要： Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

    Display Device
    9.
    发明申请
    Display Device 有权

    公开(公告)号：US20210225978A1

    公开(公告)日：2021-07-22

    申请号：US17227011

    申请日：2021-04-09

    申请人： LG Display Co., Ltd.

    发明人： Kyoung-Nam LIM ,  Yu-Ho JUNG ,  Dong-Young KIM

    IPC分类号： H01L27/32 ,  H01L51/00

    摘要： Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.