公开(公告)号：US11748614B2

公开(公告)日：2023-09-05

申请号：US16562956

申请日：2019-09-06

Applicant: LG ELECTRONICS INC.

Inventor： Dongwook Kim ,  Kunwoo Kim ,  Chala Park ,  Hojun Lee

IPC: G06N3/08 ,  G06N5/04 ,  G05B13/02

CPC classification number: G06N3/08 ,  G05B13/021 ,  G05B13/0265 ,  G06N5/04

Abstract: An artificial intelligence device for controlling an external device includes a display unit, and a processor configured to acquire a distance between the artificial intelligence device and a first external device, determine whether the acquired distance is less than a reference distance, display a first operation menu item for controlling the first external device on the display unit when the acquired distance is less than the reference distance, acquire situation information when the acquired distance is equal to or greater than the reference distance, determine a second external device as an object to be controlled based on the acquired situation information, and display a second operation menu item for controlling the determined second external device on the display unit.

公开(公告)号：US09680055B2

公开(公告)日：2017-06-13

申请号：US14067171

申请日：2013-10-30

Applicant: LG ELECTRONICS INC. ,  LG SILTRON INCORPORATED

Inventor： Kiseong Jeon ,  Hojun Lee ,  Kyejin Lee

IPC: H01L33/12 ,  H01L33/00 ,  H01L29/205

CPC classification number: H01L33/12 ,  H01L29/205 ,  H01L33/007

Abstract: A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration.