公开(公告)号：US20220393042A1

公开(公告)日：2022-12-08

申请号：US17889200

申请日：2022-08-16

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Kyungjin SHIM ,  Hyunjung PARK ,  Junghoon CHOI

IPC: H01L31/0216 ,  H01L31/0747 ,  H01L31/18

Abstract: Discussed is a solar cell including a silicon substrate, an emitter area formed on a front surface of the silicon substrate, a tunneling oxide layer formed on a back surface of the silicon substrate, a back surface field area formed on the tunneling oxide layer and formed of a polycrystalline silicon layer, a front passivation film on the emitter area, a front electrode connected to the emitter area by penetrating through the front passivation film, a back passivation film formed on the back surface field area and having an opening and a back electrode connected to the back surface field area via the opening.

公开(公告)号：US20190326451A1

公开(公告)日：2019-10-24

申请号：US16456575

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Kyungjin SHIM ,  Hyunjung PARK ,  Junghoon CHOI

IPC: H01L31/0216 ,  H01L31/0747

Abstract: A solar cell includes a silicon substrate, an emitter area formed on a front surface of the silicon substrate, a tunneling oxide layer formed on a back surface of the silicon substrate, a back surface field area formed on the tunneling oxide layer and formed of a polycrystalline silicon layer, a back passivation film formed on the back surface field area and having an opening, and a back electrode connected to the back surface field area via the opening.

公开(公告)号：US20180138324A1

公开(公告)日：2018-05-17

申请号：US15805804

申请日：2017-11-07

Applicant: LG ELECTRONICS INC.

Inventor： Yongduk JIN ,  Sungyong CHO ,  Kyungjin SHIM

IPC: H01L31/02 ,  H01L31/0224 ,  H01L31/049 ,  H01L31/05

CPC classification number: H01L31/0201 ,  H01L31/022433 ,  H01L31/049 ,  H01L31/0508 ,  Y02E10/50

Abstract: A solar cell is disclosed. The solar cell includes a semiconductor substrate having a chamfer formed at an edge thereof and an electrode electrically connected to the semiconductor substrate through a conductivity type region. The electrode includes a plurality of finger lines extending in a first direction, and a plurality of bus bars positioned in a second direction and connecting the plurality of finger lines. The plurality of bus bars include a pair of first bus bars respectively positioned at opposite ends of the semiconductor substrate and separated in the first direction by a first width greater than a width of the chamfer, and a second bus bar positioned between the pair of first bus bars. The plurality of finger lines positioned in a first area between one end of the semiconductor substrate and one of the pair of first bus bars have different shapes from the plurality of finger lines positioned in a second area between the pair of first bus bars.

公开(公告)号：US20190326452A1

公开(公告)日：2019-10-24

申请号：US16456607

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Kyungjin SHIM ,  Hyunjung PARK ,  Junghoon CHOI

IPC: H01L31/0216 ,  H01L31/0747

Abstract: A bi-facial solar cell includes a silicon substrate, a first doped region formed on a front surface of the silicon substrate, an oxide layer formed on a back surface of the silicon substrate, a second doped region formed on the oxide layer and formed of a polycrystalline silicon layer, a first passivation layer formed on the first doped region, a first anti-reflection layer formed on the first passivation layer, a plurality of first finger electrodes connected to the first doped region through a first opening in the first passivation layer and the first anti-reflection layer, a second passivation layer formed on the second doped region, a second anti-reflection layer formed on the second passivation layer, and a plurality of second finger electrodes connected to the second doped region through a second opening in the second passivation layer and the second anti-reflection layer.

公开(公告)号：US20190326453A1

公开(公告)日：2019-10-24

申请号：US16456621

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Kyungjin SHIM ,  Hyunjung PARK ,  Junghoon CHOI

IPC: H01L31/0216 ,  H01L31/0747

Abstract: A method for manufacturing a solar cell, includes providing a silicon substrate, forming an oxide layer on a first surface of the silicon substrate, forming a doped polycrystalline silicon layer on the oxide layer, forming a passivation layer on the doped polycrystalline silicon layer, printing a metal paste on the passivation layer, and forming a metal contact connected to the doped polycrystalline silicon layer by firing the metal paste to penetrate the passivation layer.

公开(公告)号：US20140299187A1

公开(公告)日：2014-10-09

申请号：US14243724

申请日：2014-04-02

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Kyungjin SHIM ,  Hyunjung PARK ,  Junghoon CHOI

IPC: H01L31/0352

Abstract: Discussed is a solar cell including a semiconductor substrate, a first tunneling layer entirely formed over a surface of the semiconductor substrate, a first conductive type area disposed on the surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive type area.

Abstract translation: 讨论了一种太阳能电池，其包括半导体衬底，完全形成在半导体衬底的表面上的第一隧穿层，设置在半导体衬底的表面上的第一导电类型区域和包括连接到第一导电 类型区域。