公开(公告)号：US11309441B2

公开(公告)日：2022-04-19

申请号：US14243724

申请日：2014-04-02

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon Chang ,  Kyungjin Shim ,  Hyunjung Park ,  Junghoon Choi

IPC: H01L31/0216 ,  H01L31/0747 ,  H01L31/18 ,  C23C16/24 ,  H01L21/48

Abstract: Discussed is a solar cell including a semiconductor substrate, a first tunneling layer entirely formed over a surface of the semiconductor substrate, a first conductive type area disposed on the surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive type area.

公开(公告)号：US11482629B2

公开(公告)日：2022-10-25

申请号：US16456621

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon Chang ,  Kyungjin Shim ,  Hyunjung Park ,  Junghoon Choi

IPC: H01L31/0216 ,  H01L31/0747 ,  H01L31/18 ,  H01L21/48 ,  C23C16/24

Abstract: A method for manufacturing a solar cell, includes providing a silicon substrate, forming an oxide layer on a first surface of the silicon substrate, forming a doped polycrystalline silicon layer on the oxide layer, forming a passivation layer on the doped polycrystalline silicon layer, printing a metal paste on the passivation layer, and forming a metal contact connected to the doped polycrystalline silicon layer by firing the metal paste to penetrate the passivation layer.

公开(公告)号：US11456391B2

公开(公告)日：2022-09-27

申请号：US16456575

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon Chang ,  Kyungjin Shim ,  Hyunjung Park ,  Junghoon Choi

IPC: H01L31/0747 ,  H01L31/0216 ,  H01L31/18 ,  C23C16/24 ,  H01L21/48

Abstract: A solar cell includes a silicon substrate, an emitter area formed on a front surface of the silicon substrate, a tunneling oxide layer formed on a back surface of the silicon substrate, a back surface field area formed on the tunneling oxide layer and formed of a polycrystalline silicon layer, a back passivation film formed on the back surface field area and having an opening, and a back electrode connected to the back surface field area via the opening.

公开(公告)号：US11329172B2

公开(公告)日：2022-05-10

申请号：US16456607

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon Chang ,  Kyungjin Shim ,  Hyunjung Park ,  Junghoon Choi

IPC: H01L31/0216 ,  H01L31/0747 ,  H01L31/18 ,  C23C16/24 ,  H01L21/48

Abstract: A bi-facial solar cell includes a silicon substrate, a first doped region formed on a front surface of the silicon substrate, an oxide layer formed on a back surface of the silicon substrate, a second doped region formed on the oxide layer and formed of a polycrystalline silicon layer, a first passivation layer formed on the first doped region, a first anti-reflection layer formed on the first passivation layer, a plurality of first finger electrodes connected to the first doped region through a first opening in the first passivation layer and the first anti-reflection layer, a second passivation layer formed on the second doped region, a second anti-reflection layer formed on the second passivation layer, and a plurality of second finger electrodes connected to the second doped region through a second opening in the second passivation layer and the second anti-reflection layer.