公开(公告)号：US10243090B2

公开(公告)日：2019-03-26

申请号：US14734870

申请日：2015-06-09

申请人： LG ELECTRONICS INC.

发明人： Youngsung Yang ,  Junghoon Choi ,  Changseo Park ,  Hyungjin Kwon

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0745

摘要： Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

公开(公告)号：USRE46515E1

公开(公告)日：2017-08-15

申请号：US14843778

申请日：2015-09-02

申请人： LG ELECTRONICS INC.

发明人： Kwangsun Ji ,  Heonmin Lee ,  Hojung Syn ,  Wonseok Choi ,  Junghoon Choi ,  Hyunjin Yang

IPC分类号： H01L31/00 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/04 ,  H01L31/042 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/0376 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02167 ,  H01L31/022441 ,  H01L31/0747 ,  Y02E10/50

摘要： A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

公开(公告)号：US11482629B2

公开(公告)日：2022-10-25

申请号：US16456621

申请日：2019-06-28

申请人： LG ELECTRONICS INC.

发明人： Jaewon Chang ,  Kyungjin Shim ,  Hyunjung Park ,  Junghoon Choi

IPC分类号： H01L31/0216 ,  H01L31/0747 ,  H01L31/18 ,  H01L21/48 ,  C23C16/24

摘要： A method for manufacturing a solar cell, includes providing a silicon substrate, forming an oxide layer on a first surface of the silicon substrate, forming a doped polycrystalline silicon layer on the oxide layer, forming a passivation layer on the doped polycrystalline silicon layer, printing a metal paste on the passivation layer, and forming a metal contact connected to the doped polycrystalline silicon layer by firing the metal paste to penetrate the passivation layer.

公开(公告)号：US10833210B2

公开(公告)日：2020-11-10

申请号：US14323986

申请日：2014-07-03

申请人： LG ELECTRONICS INC.

发明人： Hyungjin Kwon ,  Hyunjung Park ,  Junghoon Choi ,  Changseo Park

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/068 ,  H01L31/028

摘要： Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.

公开(公告)号：US09935228B2

公开(公告)日：2018-04-03

申请号：US14830480

申请日：2015-08-19

申请人： LG ELECTRONICS INC.

发明人： Youngsung Yang ,  Junghoon Choi ,  Chungyi Kim

IPC分类号： H01L31/068 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/065 ,  H01L31/18 ,  H01L31/0747

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/035209 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/065 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

摘要： A solar cell is discussed, and the solar cell includes: a semiconductor substrate; a tunneling layer on a surface of the semiconductor substrate; a buffer layer on the tunneling layer, wherein the buffer layer is a separate layer from the tunneling layer and includes an intrinsic buffer portion, and wherein at least one of a material, a composition and a crystalline structure of the buffer layer is different from those of the tunneling layer; a conductive type region on the tunneling layer, and including a first conductive type region having a first conductive type and a second conductive type region having a second conductive type; and an electrode connected to the conductive type region. The buffer layer is positioned adjacent to the tunneling layer and is apart from the electrode.

公开(公告)号：US20150007879A1

公开(公告)日：2015-01-08

申请号：US14323986

申请日：2014-07-03

申请人： LG ELECTRONICS INC.

发明人： Hyungjin Kwon ,  Hyunjung Park ,  Junghoon Choi ,  Changseo Park

IPC分类号： H01L31/0224 ,  H01L31/028 ,  H01L31/18

摘要： Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.

摘要翻译： 讨论了包括半导体衬底，形成在半导体衬底的一个表面上的隧道层的太阳能电池，形成在隧道层的表面上的第一导电半导体层和形成在隧道层的表面上的第二导电半导体层。 分离部分将第一和第二导电半导体层彼此分离，并且在与第一和第二导电半导体层之间的边界的至少一部分相对应的位置处形成在隧道层的表面上。

公开(公告)号：US10910502B2

公开(公告)日：2021-02-02

申请号：US16242561

申请日：2019-01-08

申请人： LG ELECTRONICS INC.

发明人： Youngsung Yang ,  Junghoon Choi ,  Changseo Park ,  Hyungjin Kwon

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0745 ,  H01L31/0216

摘要： A method for manufacturing a solar cell, the method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer includes depositing a semiconductor material; forming a capping layer on the semiconductor layer; and forming an electrode connected to the semiconductor layer, wherein the tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure, wherein a pressure of the forming of the semiconductor layer is smaller than the pressure of the forming of the tunneling layer, wherein the forming of the semiconductor layer further comprises doping the semiconductor layer with dopants, and wherein the capping layer is formed between the forming of the semiconductor layer and the forming of the electrode.

公开(公告)号：US10573770B2

公开(公告)日：2020-02-25

申请号：US15097897

申请日：2016-04-13

申请人： LG ELECTRONICS INC.

发明人： Sunho Kim ,  Heonmin Lee ,  Kwangsun Ji ,  Youngjoo Eo ,  Junghoon Choi ,  Sehwon Ahn

IPC分类号： H01L31/18 ,  H01L31/0376 ,  H01L31/20 ,  H05K3/18 ,  C25D7/12 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H05K3/24

摘要： Discussed is a method of manufacturing a solar cell including preparing a single crystalline silicon substrate having a first conductive type impurity; forming a non-single crystalline silicon emitter layer having a second conductive type impurity opposite to the first conductive type impurity on a first surface of the single crystalline silicon substrate; forming a first transparent conductive oxide layer on the first surface of the single crystalline silicon substrate; forming a first electrode electrically connected to the first transparent conductive oxide layer; and forming a second electrode electrically connected to the single crystalline silicon substrate, wherein the forming of the first electrode includes; forming a first seed layer on the first transparent conductive oxide layer, and forming a first plating layer over the first seed layer by plating a first conductive material.

公开(公告)号：USRE47484E1

公开(公告)日：2019-07-02

申请号：US15640956

申请日：2017-07-03

申请人： LG ELECTRONICS INC.

发明人： Kwangsun Ji ,  Heonmin Lee ,  Hojung Syn ,  Wonseok Choi ,  Junghoon Choi ,  Hyunjin Yang

IPC分类号： H01L31/00 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/0224

摘要： A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

公开(公告)号：US09887314B2

公开(公告)日：2018-02-06

申请号：US15178274

申请日：2016-06-09

申请人： LG ELECTRONICS INC.

发明人： Youngsung Yang ,  Hyungjin Kwon ,  Chungyi Kim ,  Junghoon Choi

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/068 ,  H01L21/02

CPC分类号： H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

摘要： Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.