公开(公告)号：US11245047B2

公开(公告)日：2022-02-08

申请号：US16737461

申请日：2020-01-08

Applicant: LG ELECTRONICS INC.

Inventor： Won Jae Chang ,  Young Gu Do ,  Sung Jin Kim ,  Ju Hwa Cheong ,  Jun Yong Ahn ,  Hae Jong Cho ,  Ji Soo Ko

IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224

Abstract: Provided are a method of manufacturing a solar cell, including a polycrystalline silicon layer forming operation of forming a polycrystalline silicon layer containing a first dopant on a back surface of a semiconductor substrate formed of a single crystal silicon material including a base region, a front texturing operation of texturing a front surface of the semiconductor substrate and simultaneously removing the polycrystalline silicon layer formed on the front surface of the semiconductor substrate, a second conductive region forming operation of forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate, a passivation layer forming operation of forming a first passivation layer on the polycrystalline silicon layer formed on the back surface of the semiconductor substrate and forming a second passivation layer on the second conductive region of the front surface of the semiconductor substrate, and an electrode forming operation of forming a first electrode connected to the polycrystalline silicon layer through the first passivation layer and forming a second electrode layer at the second conductive region through the second passivation layer.

公开(公告)号：US20200220039A1

公开(公告)日：2020-07-09

申请号：US16737461

申请日：2020-01-08

Applicant: LG ELECTRONICS INC.

Inventor： Won Jae Chang ,  Young Gu Do ,  Sung Jin Kim ,  Ju Hwa Cheong ,  Jun Yong Ahn ,  Hae Jong Cho ,  Ji Soo Ko

IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0236

Abstract: Provided are a method of manufacturing a solar cell, including a polycrystalline silicon layer forming operation of forming a polycrystalline silicon layer containing a first dopant on a back surface of a semiconductor substrate formed of a single crystal silicon material including a base region, a front texturing operation of texturing a front surface of the semiconductor substrate and simultaneously removing the polycrystalline silicon layer formed on the front surface of the semiconductor substrate, a second conductive region forming operation of forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate, a passivation layer forming operation of forming a first passivation layer on the polycrystalline silicon layer formed on the back surface of the semiconductor substrate and forming a second passivation layer on the second conductive region of the front surface of the semiconductor substrate, and an electrode forming operation of forming a first electrode connected to the polycrystalline silicon layer through the first passivation layer and forming a second electrode layer at the second conductive region through the second passivation layer.

公开(公告)号：US20220123164A1

公开(公告)日：2022-04-21

申请号：US17563971

申请日：2021-12-28

Applicant: LG ELECTRONICS INC.

Inventor： Won Jae Chang ,  Young Gu Do ,  Sung Jin Kim ,  Ju Hwa Cheong ,  Jun Yong Ahn ,  Hae Jong Cho ,  Ji Soo Ko

IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224

Abstract: Discussed is a solar cell including a single crystalline silicon substrate, a polycrystalline silicon layer on a back surface and side surfaces of the single crystalline silicon substrate, a diffusion region on a front surface of the single crystalline silicon substrate, a front passivation layer on the diffusion region, a back passivation layer on the polycrystalline silicon layer, a first electrode connected to the diffusion region through the front passivation layer, and a second electrode connected to the polycrystalline silicon layer through the back passivation layer, wherein the side surfaces of the single crystalline silicon substrate includes a first portion without the polycrystalline silicon layer and a second portion with the polycrystalline silicon layer.