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    Method and apparatus for controlling virtual keyboard
    1.
    发明授权
    Method and apparatus for controlling virtual keyboard 有权

    公开(公告)号：US10996850B2

    公开(公告)日：2021-05-04

    申请号：US16563579

    申请日：2019-09-06

    Applicant: LG ELECTRONICS INC.

    Inventor： Sung Jin Kim ,  Jeong Heo ,  Beom Oh Kim

    IPC: G06F3/0488 ,  G06N20/20 ,  G06F1/16 ,  G06F3/01 ,  G06F3/02

    Abstract: A virtual keyboard control apparatus and control method are disclosed. The virtual keyboard control method includes collecting typo data including a desired input key and an erroneously input key, analyzing the typo data, and updating the key mapping of at least one virtual key of the desired input key and the erroneously input key by using the analyzed result. According to the present disclosure, it is possible to implement the optimum key mapping in which a typo is less generated for each user through Reinforcement Learning of Deep Learning by using the reward called a reduction in a typo rate.

    METHOD OF MANUFACTURING SOLAR CELL
    2.
    发明申请
    METHOD OF MANUFACTURING SOLAR CELL 有权

    公开(公告)号：US20220123164A1

    公开(公告)日：2022-04-21

    申请号：US17563971

    申请日：2021-12-28

    Applicant: LG ELECTRONICS INC.

    Inventor： Won Jae Chang ,  Young Gu Do ,  Sung Jin Kim ,  Ju Hwa Cheong ,  Jun Yong Ahn ,  Hae Jong Cho ,  Ji Soo Ko

    IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224

    Abstract: Discussed is a solar cell including a single crystalline silicon substrate, a polycrystalline silicon layer on a back surface and side surfaces of the single crystalline silicon substrate, a diffusion region on a front surface of the single crystalline silicon substrate, a front passivation layer on the diffusion region, a back passivation layer on the polycrystalline silicon layer, a first electrode connected to the diffusion region through the front passivation layer, and a second electrode connected to the polycrystalline silicon layer through the back passivation layer, wherein the side surfaces of the single crystalline silicon substrate includes a first portion without the polycrystalline silicon layer and a second portion with the polycrystalline silicon layer.

    METHOD OF MANUFACTURING SOLAR CELL
    5.
    发明申请
    METHOD OF MANUFACTURING SOLAR CELL 审中-公开

    公开(公告)号：US20200220039A1

    公开(公告)日：2020-07-09

    申请号：US16737461

    申请日：2020-01-08

    Applicant: LG ELECTRONICS INC.

    Inventor： Won Jae Chang ,  Young Gu Do ,  Sung Jin Kim ,  Ju Hwa Cheong ,  Jun Yong Ahn ,  Hae Jong Cho ,  Ji Soo Ko

    IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0236

    Abstract: Provided are a method of manufacturing a solar cell, including a polycrystalline silicon layer forming operation of forming a polycrystalline silicon layer containing a first dopant on a back surface of a semiconductor substrate formed of a single crystal silicon material including a base region, a front texturing operation of texturing a front surface of the semiconductor substrate and simultaneously removing the polycrystalline silicon layer formed on the front surface of the semiconductor substrate, a second conductive region forming operation of forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate, a passivation layer forming operation of forming a first passivation layer on the polycrystalline silicon layer formed on the back surface of the semiconductor substrate and forming a second passivation layer on the second conductive region of the front surface of the semiconductor substrate, and an electrode forming operation of forming a first electrode connected to the polycrystalline silicon layer through the first passivation layer and forming a second electrode layer at the second conductive region through the second passivation layer.

    Method for extracting coffee
    6.
    发明授权
    Method for extracting coffee 有权

    公开(公告)号：US11641971B2

    公开(公告)日：2023-05-09

    申请号：US16701071

    申请日：2019-12-02

    Applicant: LG ELECTRONICS INC.

    Inventor： Jun Ho Kim ,  Min Jung Kim ,  Yoo Jin Choi ,  In Jun Park ,  Sung Jin Kim

    IPC: A47J31/00 ,  A47J31/52 ,  A47J31/44 ,  A23F5/26

    CPC classification number: A47J31/002 ,  A23F5/262 ,  A47J31/4475 ,  A47J31/525

    Abstract: According to the present disclosure, when drip coffee is extracted, it may learn drip coffee recipe information of a barista to be imitated and extract the drip coffee based on the learned reference acidity and reference concentration. The extracted drip coffee may be compared with the learned reference acidity and the reference concentration and evaluated, and when the acidity and concentration of the drip coffee are matched with the reference acidity and the reference concentration, the drip coffee having the same acidity and concentration as the drip coffee may be extracted. Alternatively, when the acidity and concentration of the drip coffee are not matched with the reference acidity and the reference concentration, drip coffee having the same or/and similar acidity and concentration as or/and to the reference acidity and the reference concentration may be extracted by changing extraction conditions of the drip coffee through reinforcement learning.

    Method of manufacturing solar cell
    8.
    发明授权
    Method of manufacturing solar cell 有权

    公开(公告)号：US11245047B2

    公开(公告)日：2022-02-08

    申请号：US16737461

    申请日：2020-01-08

    Applicant: LG ELECTRONICS INC.

    Inventor： Won Jae Chang ,  Young Gu Do ,  Sung Jin Kim ,  Ju Hwa Cheong ,  Jun Yong Ahn ,  Hae Jong Cho ,  Ji Soo Ko

    IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224

    Abstract: Provided are a method of manufacturing a solar cell, including a polycrystalline silicon layer forming operation of forming a polycrystalline silicon layer containing a first dopant on a back surface of a semiconductor substrate formed of a single crystal silicon material including a base region, a front texturing operation of texturing a front surface of the semiconductor substrate and simultaneously removing the polycrystalline silicon layer formed on the front surface of the semiconductor substrate, a second conductive region forming operation of forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate, a passivation layer forming operation of forming a first passivation layer on the polycrystalline silicon layer formed on the back surface of the semiconductor substrate and forming a second passivation layer on the second conductive region of the front surface of the semiconductor substrate, and an electrode forming operation of forming a first electrode connected to the polycrystalline silicon layer through the first passivation layer and forming a second electrode layer at the second conductive region through the second passivation layer.

    Display device and method
    9.
    发明授权
    Display device and method 有权

    公开(公告)号：US11127372B2

    公开(公告)日：2021-09-21

    申请号：US16579764

    申请日：2019-09-23

    Applicant: LG ELECTRONICS INC.

    Inventor： Dong Ho Kim ,  Yun Jun Choi ,  Seung Jong Choi ,  Sung Jin Kim

    IPC: G09G5/10 ,  G06K9/32 ,  G06N3/04 ,  G06N3/08

    Abstract: The present disclosure relates to a display device and a display method for reducing a burn-in phenomenon by performing an on-board artificial intelligence (AI) algorithm and/or machine learning algorithm to predict a display duration of an object in an image, and processing the image based on the predicted display duration. The display method according to one embodiment of the present disclosure may include extracting a predetermined type of object from an inputted image, predicting a display duration of the extracted object, and adjusting a luminance value of a pixel in an area corresponding to the object in the image based on the predicted display duration, and displaying the image in which the adjusted luminance value of the pixel is reflected.

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