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公开(公告)号:USD900776S1
公开(公告)日:2020-11-03
申请号:US35506516
申请日:2018-08-10
Applicant: LG ELECTRONICS INC.
Designer: Seunghyun Ji , Dongeun Kim , Hyun Lee
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公开(公告)号:USD897304S1
公开(公告)日:2020-09-29
申请号:US35505010
申请日:2017-11-30
Applicant: LG ELECTRONICS INC.
Designer: Hanwool Choi , Hyoni Kim , Seungbeom Park , Hyun Lee , Jiyoun Cha
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公开(公告)号:USD856297S1
公开(公告)日:2019-08-13
申请号:US35503819
申请日:2017-04-07
Applicant: LG ELECTRONICS INC.
Designer: Seungchul Cho , Doyoung Park , Hyun Lee
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公开(公告)号:USD854508S1
公开(公告)日:2019-07-23
申请号:US35504942
申请日:2017-11-17
Applicant: LG ELECTRONICS INC.
Designer: Seungbeom Park , Hyoni Kim , Hyun Lee , Jiyoun Cha
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公开(公告)号:USD843991S1
公开(公告)日:2019-03-26
申请号:US29586909
申请日:2016-12-07
Applicant: LG ELECTRONICS INC.
Designer: Dongeun Kim , Suhyeon Son , Hyun Lee
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公开(公告)号:USD843339S1
公开(公告)日:2019-03-19
申请号:US29586232
申请日:2016-12-01
Applicant: LG ELECTRONICS INC.
Designer: Dongeun Kim , Hwitae Lim , Hyun Lee
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公开(公告)号:US10861991B2
公开(公告)日:2020-12-08
申请号:US15904019
申请日:2018-02-23
Applicant: LG ELECTRONICS INC.
Inventor: Soohyun Kim , Gunho Kim , Hyun Lee , Wonseok Choi , Younho Heo
IPC: H01L31/0352 , H01L31/0224 , H01L31/0735 , H01L31/18
Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The compound semiconductor solar cell includes a compound semiconductor layer, a front electrode positioned on a front surface of the compound semiconductor layer, a back electrode positioned on a back surface of the compound semiconductor layer, a defect portion disposed within the compound semiconductor layer and physically and electrically connected to the back electrode, and an isolation portion surrounding the defect portion.
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公开(公告)号:USD883942S1
公开(公告)日:2020-05-12
申请号:US29644518
申请日:2018-04-18
Applicant: LG ELECTRONICS INC.
Designer: Jiyoun Cha , Hyoni Kim , Seungbeom Park , Woonlee Park , Hyun Lee , Hanwool Choi
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公开(公告)号:US10529874B2
公开(公告)日:2020-01-07
申请号:US15951379
申请日:2018-04-12
Applicant: LG Electronics Inc.
Inventor: Younho Heo , Soohyun Kim , Hyun Lee , Changhyun Jeong
IPC: H01L31/0224 , H01L31/02 , H01L31/18 , H01L31/0216 , H01L31/0304
Abstract: According to an aspect of the present invention, there is provided a method for manufacturing a compound semiconductor solar cell, comprising: forming a sacrificial layer on one surface of a mother substrate; forming a compound semiconductor layer on the sacrificial layer; forming a first protective layer formed of a compound semiconductor on the compound semiconductor layer; depositing a second passivation layer on the first passivation layer; attaching a first lamination film on the second protective layer; separating the compound semiconductor layer, the first and second protective layers, and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer; forming a back electrode on the compound semiconductor layer; attaching a second lamination film on the back electrode; removing the first lamination film; removing the second protective layer; removing the first protective layer; and forming a front electrode on the compound semiconductor layer.
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公开(公告)号:USD843990S1
公开(公告)日:2019-03-26
申请号:US29586803
申请日:2016-12-07
Applicant: LG ELECTRONICS INC.
Designer: Dongeun Kim , Suhyeon Son , Hyun Lee
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