公开(公告)号：US11798921B2

公开(公告)日：2023-10-24

申请号：US17530155

申请日：2021-11-18

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Jinhyung Lee ,  Jungsub Kim ,  Seongmin Moon ,  Younho Heo

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L21/6835 ,  H01L33/0093 ,  H01L33/62 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2933/0066

Abstract: Discussed is an assembly substrate used for a display device manufacturing method of mounting semiconductor light-emitting diodes on the assembly substrate at preset positions using electric field and magnetic field. The assembly substrate includes a base portion, a plurality of assembly electrodes on the base portion, a dielectric layer on the base portion to cover the assembly electrodes, a barrier wall on the base portion, and a metal shielding layer on the base portion, wherein the metal shielding layer overlaps the barrier wall.

公开(公告)号：US11211366B2

公开(公告)日：2021-12-28

申请号：US16834315

申请日：2020-03-30

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Jinhyung Lee ,  Jungsub Kim ,  Seongmin Moon ,  Younho Heo

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/683 ,  H01L33/62

Abstract: The present disclosure relates to an assembly substrate used for a display device manufacturing method in which semiconductor light-emitting diodes are placed on the assembly substrate at preset positions using electric field and magnetic field. Specifically, the assembly substrate includes a base portion, a plurality of assembly electrodes extending in one direction and disposed on the base portion, a dielectric layer stacked on the base portion to cover the assembly electrodes, a barrier wall formed on the base portion and having a plurality of recesses for guiding the semiconductor light-emitting diodes to the preset positions, and a metal shielding layer formed on the base portion, wherein the metal shielding layer overlaps the barrier wall so that an electric field formed between the assembly electrodes is shielded.

公开(公告)号：US10861991B2

公开(公告)日：2020-12-08

申请号：US15904019

申请日：2018-02-23

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun Kim ,  Gunho Kim ,  Hyun Lee ,  Wonseok Choi ,  Younho Heo

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/0735 ,  H01L31/18

Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The compound semiconductor solar cell includes a compound semiconductor layer, a front electrode positioned on a front surface of the compound semiconductor layer, a back electrode positioned on a back surface of the compound semiconductor layer, a defect portion disposed within the compound semiconductor layer and physically and electrically connected to the back electrode, and an isolation portion surrounding the defect portion.

公开(公告)号：US10529874B2

公开(公告)日：2020-01-07

申请号：US15951379

申请日：2018-04-12

Applicant: LG Electronics Inc.

Inventor： Younho Heo ,  Soohyun Kim ,  Hyun Lee ,  Changhyun Jeong

IPC: H01L31/0224 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0304

Abstract: According to an aspect of the present invention, there is provided a method for manufacturing a compound semiconductor solar cell, comprising: forming a sacrificial layer on one surface of a mother substrate; forming a compound semiconductor layer on the sacrificial layer; forming a first protective layer formed of a compound semiconductor on the compound semiconductor layer; depositing a second passivation layer on the first passivation layer; attaching a first lamination film on the second protective layer; separating the compound semiconductor layer, the first and second protective layers, and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer; forming a back electrode on the compound semiconductor layer; attaching a second lamination film on the back electrode; removing the first lamination film; removing the second protective layer; removing the first protective layer; and forming a front electrode on the compound semiconductor layer.