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公开(公告)号：US20170370020A1
公开(公告)日：2017-12-28
申请号：US15544825
申请日：2015-12-23
申请人： LG SILTRON INC.
发明人： Dong-Ho KANG , Man-Kee CHO
摘要： Provided is a process of baking the inside of a reaction chamber in a re-operation preparation process of the reaction chamber in which epitaxial growth is performed on a wafer. The process of baking the inside of the reaction chamber in the re-operation preparation process of the reaction chamber in which epitaxial growth is performed on the wafer includes rising an inner temperature of the reaction chamber in stages according to a time and introducing a hydrogen gas to upper and lower sides of a susceptor through a main valve and a slit valve, which are provided in a side surface of the reaction chamber. Thus, since power of a heating source for transmitting heat into the reaction chamber increases in stages, an atmosphere in the reaction chamber may be unstable to allow stagnant moisture and contaminants to flow, thereby effectively discharging the moisture and contaminants.
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公开(公告)号：US20170370021A1
公开(公告)日：2017-12-28
申请号：US15544839
申请日：2015-12-23
申请人： LG SILTRON INC.
发明人： Man-Kee CHO , Dong-Ho KANG
CPC分类号： C30B25/14 , C23C16/4401 , C23C16/4405 , C30B25/08 , C30B25/12 , H01L21/6719
摘要： Provided is a re-operation preparation process of a reaction chamber in which epitaxial growth is performed on a wafer. The re-operation preparation process of the reaction chamber includes disposing a susceptor provided in the reaction chamber and on which the wafer is seated at a preset first position and setting a flow rate of a hydrogen gas introduced through a main valve so that the flow rate is greater than that of a hydrogen gas introduced through a slit valve and moving the susceptor to a preset second position and setting an amount of hydrogen gas introduced through the main valve while the susceptor is maintained at the second position so that the amount of hydrogen gas is less than that of hydrogen gas introduced through the slit valve. Thus, moisture and contaminants stagnant in a lower portion of the reaction chamber may be smoothly discharged along a flow of the hydrogen gas toward a discharge hole.
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