Abstract:
A fabricating method of a polycrystalline silicon thin film transistor includes forming a polycrystalline silicon layer on a substrate having first and second regions through a crystallization process using nickel silicide (NiSix) as a catalyst, patterning the polycrystalline silicon layer to form an active layer at the first region, leaving a nickel silicide residue at the second region, etching the nickel silicide residue with a solution including hydrofluoric acid (HF) and hydrogen peroxide (H2O2), forming a gate electrode over the active layer and forming a source and drain in the active layer.
Abstract translation:多晶硅薄膜晶体管的制造方法包括通过使用硅化镍(NiSix)作为催化剂的结晶工艺在具有第一和第二区域的基板上形成多晶硅层,图案化多晶硅层以形成活性层 在第二区域留下镍硅化物残留物,用包含氢氟酸(HF)和过氧化氢(H 2 O 2)的溶液蚀刻硅化镍残渣,在有源层上形成栅电极,并形成源极和漏极 活动层
Abstract:
A method for fabricating an array substrate of a liquid crystal display device includes forming a gate line and a gate electrode connected to the gate line, forming a gate insulating layer, an amorphous silicon layer, a doped amorphous silicon layer and a metal layer on the gate line and the gate electrode, forming a data line, a source electrode, a drain electrode, an ohmic contact layer and an active layer by patterning the metal layer, the doped amorphous silicon layer and the amorphous silicon layer with a single photolithographic masking step, forming a passivation layer covering the data line, and the source and drain electrodes, the passivation layer having a contact hole exposing a portion of the drain electrode, and forming a pixel electrode connected to the drain electrode through the contact hole.