Fabricating method of polycrystalline silicon thin film transistor
    1.
    发明申请
    Fabricating method of polycrystalline silicon thin film transistor 有权
    多晶硅薄膜晶体管的制造方法

    公开(公告)号:US20030124779A1

    公开(公告)日:2003-07-03

    申请号:US10319636

    申请日:2002-12-16

    Abstract: A fabricating method of a polycrystalline silicon thin film transistor includes forming a polycrystalline silicon layer on a substrate having first and second regions through a crystallization process using nickel silicide (NiSix) as a catalyst, patterning the polycrystalline silicon layer to form an active layer at the first region, leaving a nickel silicide residue at the second region, etching the nickel silicide residue with a solution including hydrofluoric acid (HF) and hydrogen peroxide (H2O2), forming a gate electrode over the active layer and forming a source and drain in the active layer.

    Abstract translation: 多晶硅薄膜晶体管的制造方法包括通过使用硅化镍(NiSix)作为催化剂的结晶工艺在具有第一和第二区域的基板上形成多晶硅层,图案化多晶硅层以形成活性层 在第二区域留下镍硅化物残留物,用包含氢氟酸(HF)和过氧化氢(H 2 O 2)的溶液蚀刻硅化镍残渣,在有源层上形成栅电极,并形成源极和漏极 活动层

    Method for fabricating an array substrate of a liquid crystal display device
    2.
    发明申请
    Method for fabricating an array substrate of a liquid crystal display device 审中-公开
    液晶显示装置的阵列基板的制造方法

    公开(公告)号:US20020054247A1

    公开(公告)日:2002-05-09

    申请号:US09985665

    申请日:2001-11-05

    Abstract: A method for fabricating an array substrate of a liquid crystal display device includes forming a gate line and a gate electrode connected to the gate line, forming a gate insulating layer, an amorphous silicon layer, a doped amorphous silicon layer and a metal layer on the gate line and the gate electrode, forming a data line, a source electrode, a drain electrode, an ohmic contact layer and an active layer by patterning the metal layer, the doped amorphous silicon layer and the amorphous silicon layer with a single photolithographic masking step, forming a passivation layer covering the data line, and the source and drain electrodes, the passivation layer having a contact hole exposing a portion of the drain electrode, and forming a pixel electrode connected to the drain electrode through the contact hole.

    Abstract translation: 一种制造液晶显示装置的阵列基板的方法包括:形成栅极线和连接到栅极线的栅电极,在栅极线上形成栅绝缘层,非晶硅层,掺杂非晶硅层和金属层 栅极线和栅电极,通过用单一光刻掩模步骤图案化金属层,掺杂非晶硅层和非晶硅层来形成数据线,源电极,漏电极,欧姆接触层和有源层 形成覆盖数据线的钝化层,以及源极和漏极,钝化层具有暴露漏电极的一部分的接触孔,以及通过接触孔形成连接到漏电极的像素电极。

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