公开(公告)号：US20040125327A1

公开(公告)日：2004-07-01

申请号：US10653914

申请日：2003-09-04

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Nack-Bong Choi ,  Seung Hee Nam ,  Jae-Young Oh

IPC: G02F001/136

CPC classification number: H01L27/1288 ,  G02F1/13458 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L29/66765

Abstract: A method of fabricating a liquid crystal display device includes forming a gate line, a gate pad, and a gate electrode on a first substrate, forming a gate insulating layer on the gate line, the gate electrode, and the gate pad, forming an active layer on the gate insulating layer, forming an ohmic contact layer on the active layer, forming a data line, a data pad, and source and drain electrodes on the ohmic contact layer, forming a pixel electrode contacting the drain electrode, forming a passivation layer on the substrate including the pixel electrode, forming a common electrode on a second substrate, attaching the first and second substrates such that the pixel electrode and the common electrode are facing into each other, injecting a liquid crystal material between the first and second substrates, and exposing the gate pad and the data pad without forming contact holes.

Abstract translation: 制造液晶显示装置的方法包括在第一基板上形成栅极线，栅极焊盘和栅电极，在栅极线，栅极电极和栅极焊盘上形成栅极绝缘层，形成有源 在栅绝缘层上形成欧姆接触层，在有源层上形成欧姆接触层，在欧姆接触层上形成数据线，数据焊盘和源电极和漏电极，形成与漏极接触的像素电极，形成钝化层 在包括像素电极的基板上，在第二基板上形成公共电极，将第一基板和第二基板连接成使得像素电极和公共电极彼此面对，在第一和第二基板之间注入液晶材料， 并且不形成接触孔来暴露栅极焊盘和数据焊盘。

公开(公告)号：US20040263704A1

公开(公告)日：2004-12-30

申请号：US10848057

申请日：2004-05-19

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Jae-Young Oh ,  Seong-Hee Nam

IPC: G02F001/136

CPC classification number: G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2202/104 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78621

Abstract: A method of fabricating a polysilicon LCD device includes forming an active layer on a substrate, forming a first insulating layer having a first thickness and a second insulating layer having a second thickness sequentially on the active layer, forming a photoresist on the second insulating layer, ashing the photoresist, etching first portions of the first thickness of the first insulating layer corresponding to the source and drain electrode regions and the reduced second thickness of the second insulating layer within the first regions to expose source and drain regions of the active layer corresponding to the source and drain electrode regions, and etching a second portion of the second thickness of the second insulating layer to expose a portion of the first insulating layer corresponding to a gate electrode region, forming a gate electrode, a source electrode, and a drain electrode simultaneously on the second insulating layer, forming a passivation layer on the gate electrode, the source electrode, and the drain electrode, and forming a pixel electrode on the passivation layer.

Abstract translation: 一种制造多晶硅LCD器件的方法包括在衬底上形成有源层，在有源层上依次形成具有第一厚度的第一绝缘层和具有第二厚度的第二绝缘层，在第二绝缘层上形成光致抗蚀剂， 灰化所述光致抗蚀剂，蚀刻所述第一绝缘层的第一厚度对应于所述源极和漏极电极区域的第一部分以及在所述第一区域内的所述第二绝缘层的减小的第二厚度，以暴露所述有源层的源极和漏极区域对应于 源极和漏极区域，并且蚀刻第二绝缘层的第二厚度的第二部分，以暴露与栅电极区对应的第一绝缘层的一部分，形成栅电极，源电极和漏电极 同时在第二绝缘层上，在栅电极t上形成钝化层 源电极和漏电极，并在钝化层上形成像素电极。