公开(公告)号：US20230044413A1

公开(公告)日：2023-02-09

申请号：US17786269

申请日：2020-12-01

Applicant: LINTEC Corporation

Inventor： Yuta SEKI ,  Kunihisa KATO ,  Tsuyoshi MUTO

IPC: H01L35/26 ,  H01L35/32 ,  H01L35/34

Abstract: Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

公开(公告)号：US20210328124A1

公开(公告)日：2021-10-21

申请号：US17271057

申请日：2019-08-27

Applicant: LINTEC CORPORATION

Inventor： Wataru MORITA ,  Kunihisa KATO ,  Tsuyoshi MUTO ,  Yuma KATSUTA

IPC: H01L35/34 ,  H01L35/16

Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

公开(公告)号：US20210098672A1

公开(公告)日：2021-04-01

申请号：US17041063

申请日：2019-03-25

Applicant: LINTEC CORPORATION

Inventor： Kunihisa KATO ,  Tsuyoshi MUTO ,  Yuma KATSUTA

IPC: H01L35/08 ,  H01L35/16 ,  H01L35/32 ,  H01L35/34

Abstract: Provided is a thermoelectric conversion module that improves the solderability between a thermoelectric element layer containing a resin and a solder layer. The thermoelectric conversion module includes a first substrate having a first electrode, a second substrate having a second electrode, a thermoelectric element layer, a solder-receiving layer that directly bonds to the thermoelectric element layer, and a solder layer, wherein the first electrode of the first substrate and the second electrode of the second substrate face each other, and wherein the thermoelectric element layer is formed of a thin film of a thermoelectric semiconductor composition containing a resin, and the solder-receiving layer contains a metal material.

公开(公告)号：US20230139556A1

公开(公告)日：2023-05-04

申请号：US17915549

申请日：2021-03-19

Applicant: LINTEC CORPORATION

Inventor： Yuta SEKI ,  Tsuyoshi MUTO

IPC: H10N10/17

Abstract: Provided is a thermoelectric conversion module in which heat dissipation is further improved with a simple structure. The thermoelectric conversion module is a thermoelectric conversion module including a first electrode, a P-type thermoelectric element layer and an N-type thermoelectric element layer, and a second electrode disposed opposite the first electrode. The thermoelectric conversion module includes a plurality of PN-junction pairs in which the P-type thermoelectric element layer and the N-type thermoelectric element layer are PN-joined through the first electrode or the second electrode, the plurality of PN-junction pairs being electrically connected in series alternately by the first electrode and the second electrode. An area of the second electrode is larger than an area of the first electrode.

公开(公告)号：US20210391523A1

公开(公告)日：2021-12-16

申请号：US17282047

申请日：2019-10-02

Applicant: LINTEC CORPORATION

Inventor： Tsuyoshi MUTO ,  Kunihisa KATO ,  Taku NEMOTO ,  Wataru MORITA ,  Yuta SEKI

IPC: H01L35/34 ,  H01L35/32

Abstract: A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

公开(公告)号：US20210036202A1

公开(公告)日：2021-02-04

申请号：US16498272

申请日：2017-10-24

Applicant: LINTEC Corporation

Inventor： Yusuke HARA ,  Wataru MORITA ,  Kunihisa KATO ,  Tsuyoshi MUTO

IPC: H01L35/32 ,  H01L35/02 ,  H01L35/34

Abstract: The present invention is to provide a thermoelectric conversion module capable of maintaining a thermoelectric performance and revealing excellent insulation properties and a method of producing the same. Provided are a thermoelectric conversion module including a heat dissipation layer via an insulating layer on at least one face of a thermoelectric element layer being one in which a p-type thermoelectric element layer and an n-type thermoelectric element layer are alternately arranged to be adjacent to each other in the in-plane direction and disposed in series, wherein the insulating layer has an elastic modulus at 23° C. of 0.1 to 500 GPa, and a method of producing the same.

公开(公告)号：US20210376218A1

公开(公告)日：2021-12-02

申请号：US17271091

申请日：2019-08-27

Applicant: LINTEC CORPORATION

Inventor： Masaya TODAKA ,  Kunihisa KATO ,  Tsuyoshi MUTO ,  Yuma KATSUTA

IPC: H01L35/34 ,  H01L35/08 ,  H01L35/16

Abstract: Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13). Also provided are: a method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including (A) a step of forming a sacrificial layer (2) on a substrate (1), (B) a step of forming a chip of a thermoelectric conversion material on the sacrificial layer formed in the step (A), (C) a step of annealing the chip of a thermoelectric conversion material formed in the step (B), and (D) a step of peeling the chip of a thermoelectric conversion material annealed in the step (C); and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

公开(公告)号：US20210257531A1

公开(公告)日：2021-08-19

申请号：US17271021

申请日：2019-08-27

Applicant: LINTEC CORPORATION

Inventor： Kunihisa KATO ,  Tsuyoshi MUTO ,  Masaya TODAKA ,  Yuma KATSUTA

IPC: H01L35/34 ,  H01L35/08 ,  H01L35/32

Abstract: A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

公开(公告)号：US20210036203A1

公开(公告)日：2021-02-04

申请号：US16498309

申请日：2018-03-29

Applicant: LINTEC CORPORATION

Inventor： Wataru MORITA ,  Kunihisa KATO ,  Tsuyoshi MUTO

IPC: H01L35/32 ,  H01L35/02

Abstract: The present invention provides a thermoelectric conversion device layer having excellent durability and a method of producing the same. Specifically, the present invention provides a thermoelectric conversion device layer including a thermoelectric conversion module including, on one face of a film substrate, a thermoelectric element layer in which a P-type thermoelectric element layer and an N-type thermoelectric element layer are alternately arranged to be adjacent to each other in the in-plane direction and disposed in series; and further a sealing layer on the face side of the thermoelectric element layer, wherein the sealing layer has a water vapor transmission rate at 40° C. and 90% RH, as prescribed in JIS K7129:2008, of 1,000 g·m−2·day−1 or less; and a method of producing the same.