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公开(公告)号：US20200066960A1
公开(公告)日：2020-02-27
申请号：US16467745
申请日：2017-12-07
Applicant: LINTEC CORPORATION
Inventor： Kunihisa KATO , Wataru MORITA , Tsuyoshi MUTOU , Yuma KATSUTA , Takeshi KONDO
Abstract: The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.
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公开(公告)号：US20170373240A1
公开(公告)日：2017-12-28
申请号：US15538337
申请日：2015-12-24
Applicant: LINTEC CORPORATION
Inventor： Kunihisa KATO , Tsuyoshi MUTOU , Wataru MORITA , Yuma KATSUTA , Takeshi KONDO
Abstract: To provide a Peltier cooling element that is excellent in thermoelectric performance and flexibility and can be manufactured easily at low cost. A Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, and a method for manufacturing a Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, the method containing: coating a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, on a support, and drying, so as to form a thin film; and subjecting the thin film to an annealing treatment.
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公开(公告)号：US20240023205A1
公开(公告)日：2024-01-18
申请号：US18028487
申请日：2021-03-31
Applicant: LINTEC CORPORATION
Inventor： Takashi MORIOKA , Yuma KATSUTA , Masaharu ITO
CPC classification number: H05B3/347 , H01R11/01 , H05B3/03 , H05B3/06 , H05B3/145 , H05B3/345 , H05B3/36 , H05B2203/014 , H05B2203/017 , H05B2214/04
Abstract: A wiring sheet includes a pair of electrodes and a pseudo sheet structure including a plurality of conductive linear bodies arranged at intervals, in which the pseudo sheet structure is electrically connected to the electrodes, and the conductive linear bodies and the electrodes are fixed with contact fixing members.
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Patent Agency Ranking
公开(公告)号：US20210328124A1
公开(公告)日：2021-10-21
申请号：US17271057
申请日：2019-08-27
Applicant: LINTEC CORPORATION
Inventor： Wataru MORITA , Kunihisa KATO , Tsuyoshi MUTO , Yuma KATSUTA
Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.
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公开(公告)号：US20210098672A1
公开(公告)日：2021-04-01
申请号：US17041063
申请日：2019-03-25
Applicant: LINTEC CORPORATION
Inventor： Kunihisa KATO , Tsuyoshi MUTO , Yuma KATSUTA
Abstract: Provided is a thermoelectric conversion module that improves the solderability between a thermoelectric element layer containing a resin and a solder layer. The thermoelectric conversion module includes a first substrate having a first electrode, a second substrate having a second electrode, a thermoelectric element layer, a solder-receiving layer that directly bonds to the thermoelectric element layer, and a solder layer, wherein the first electrode of the first substrate and the second electrode of the second substrate face each other, and wherein the thermoelectric element layer is formed of a thin film of a thermoelectric semiconductor composition containing a resin, and the solder-receiving layer contains a metal material.
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公开(公告)号：US20230139564A1
公开(公告)日：2023-05-04
申请号：US17911917
申请日：2021-03-03
Applicant: LINTEC CORPORATION
Inventor： Masaharu ITO , Takashi MORIOKA , Taiga MATSUSHITA , Yuma KATSUTA
Abstract: A pseudo sheet structure is usable for a sensor configured to emit an electromagnetic wave in a band ranging from 20 GHz to 100 GHz. The pseudo sheet structure includes a plurality of conductive linear bodies arranged at an interval L satisfying a formula (1) below, 0.034×λS≤L≤20 mm (1). In the formula (1), L is the interval between the plurality of conductive linear bodies, λS is a wavelength of the electromagnetic wave emitted by the sensor, and a unit for each of L and λS is mm.
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公开(公告)号：US20210376218A1
公开(公告)日：2021-12-02
申请号：US17271091
申请日：2019-08-27
Applicant: LINTEC CORPORATION
Inventor： Masaya TODAKA , Kunihisa KATO , Tsuyoshi MUTO , Yuma KATSUTA
Abstract: Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13). Also provided are: a method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including (A) a step of forming a sacrificial layer (2) on a substrate (1), (B) a step of forming a chip of a thermoelectric conversion material on the sacrificial layer formed in the step (A), (C) a step of annealing the chip of a thermoelectric conversion material formed in the step (B), and (D) a step of peeling the chip of a thermoelectric conversion material annealed in the step (C); and a method for producing a thermoelectric conversion module using the chip produced according to the production method.
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公开(公告)号：US20210257531A1
公开(公告)日：2021-08-19
申请号：US17271021
申请日：2019-08-27
Applicant: LINTEC CORPORATION
Inventor： Kunihisa KATO , Tsuyoshi MUTO , Masaya TODAKA , Yuma KATSUTA
Abstract: A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.
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