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公开(公告)号:US11309389B2
公开(公告)日:2022-04-19
申请号:US14648609
申请日:2013-11-21
申请人: LX Semicon Co., Ltd.
发明人: Seok Min Kang , Ji Hye Kim , Heung Teak Bae
IPC分类号: H01L29/16 , H01L21/02 , H01L29/06 , H01L29/872 , H01L29/78 , H01L29/08 , H01L33/34 , H01L33/32 , H01L29/32 , H01L33/02 , H01L33/00
摘要: An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less.