公开(公告)号：US20250014890A1

公开(公告)日：2025-01-09

申请号：US18709780

申请日：2022-11-30

Applicant: Lam Research Corporation

Inventor： Awnish Gupta ,  Bart J. Van Schravendijk ,  Jon Henri ,  Oksana Savchak ,  Fengyan Wei ,  Easwar Srinivasan ,  Dustin Zachary Austin

IPC: H01L21/02 ,  C07F7/18 ,  C23C16/34 ,  C23C16/455

Abstract: The present disclosure relates to methods for providing a silicon nitride film. In particular, the film can be a carbon-doped, silicon nitride film. Methods can include depositing a doped silicon nitride and then plasma treating the doped silicon nitride to provide a conformal film.

公开(公告)号：US20240410053A1

公开(公告)日：2024-12-12

申请号：US18721457

申请日：2022-12-19

Applicant: Lam Research Corporation

Inventor： Awnish Gupta ,  Bart J. van Schravendijk ,  Jon Henri ,  Fengyan Wei ,  Oksana Savchak ,  Easwar Srinivasan

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/52 ,  C23C16/56

Abstract: Methods and apparatus for forming silicon oxide using chlorosilane and aminosilane precursors are provided herein.

公开(公告)号：US20250069882A1

公开(公告)日：2025-02-27

申请号：US18727030

申请日：2022-12-30

Applicant: Lam Research Corporation

Inventor： Awnish Gupta ,  Bart J. Van Schravendijk ,  Jon Henri ,  Oksana Savchak ,  Fengyan Wei ,  Easwar Srinivasan

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: Methods and apparatuses for depositing silicon nitride in various applications are provided. Embodiments include depositing silicon nitride directly on silicon or silicon oxide surfaces using modulated dose to conversion time ratios in thermal atomic layer deposition. Embodiments include exposing a silicon oxide surface to a nitrogen-containing plasma treatment prior to depositing any silicon nitride and depositing silicon nitride by thermal atomic layer deposition.