公开(公告)号：US12205793B2

公开(公告)日：2025-01-21

申请号：US17163248

申请日：2021-01-29

Applicant: Lam Research Corporation

Inventor： Seokmin Yun ,  Shuogang Huang ,  Zhimin Wan ,  Mark Merrill

IPC: H01J37/305 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

Abstract: Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The grid system is oriented so the ion beam is directed into the chamber toward the substrate support, and the array of holes of the grid system is defined vertically by a y-axis and horizontally by an x-axis, The array of holes is defined by hole densities that vary vertically in the y-axis such that the ion beam is caused to have an energy density gradient that is defined vertically in the y-axis.

公开(公告)号：US20190148109A1

公开(公告)日：2019-05-16

申请号：US15809957

申请日：2017-11-10

Applicant: Lam Research Corporation

Inventor： Seokmin Yun ,  Shuogang Huang ,  Zhimin Wan ,  Mark Merrill

IPC: H01J37/305 ,  H01L21/67 ,  H01L21/687 ,  H01L21/3065 ,  H01L21/66 ,  H01J37/32 ,  H01J37/20

Abstract: Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The size of the plurality holes varies along an axis such that the ion density of the ion beam also varies along the axis. The density of the plurality of holes varies along an axis such that the ion density of the ion beam also varies along the axis. In some embodiments, the energies of a beamlet or multiple beamlets may be individual defined to adjust beam energy density.

公开(公告)号：US20210151290A1

公开(公告)日：2021-05-20

申请号：US17163248

申请日：2021-01-29

Applicant: Lam Research Corporation

Inventor： Seokmin Yun ,  Shuogang Huang ,  Zhimin Wan ,  Mark Merrill

IPC: H01J37/305 ,  H01L21/67 ,  H01L21/687 ,  H01L21/3065 ,  H01J37/32

Abstract: Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The grid system is oriented so the ion beam is directed into the chamber toward the substrate support, and the array of holes of the grid system is defined vertically by a y-axis and horizontally by an x-axis, The array of holes is defined by hole densities that vary vertically in the y-axis such that the ion beam is caused to have an energy density gradient that is defined vertically in the y-axis.

公开(公告)号：US20210327689A1

公开(公告)日：2021-10-21

申请号：US17363870

申请日：2021-06-30

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Neema Rastgar ,  Alexander Miller Paterson ,  Mark Merrill

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate processing system includes a processing chamber including a substrate support to support a substrate. A coil includes at least one terminal. An RF source configured to supply RF power to the coil. A dielectric window is arranged on one surface of the processing chamber adjacent to the coil. A contamination reducer includes a first plate that is arranged between the at least one terminal of the coil and the dielectric window.