Systems for cooling RF heated chamber components

    公开(公告)号:US11495441B2

    公开(公告)日:2022-11-08

    申请号:US17084103

    申请日:2020-10-29

    IPC分类号: H01J37/32

    摘要: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

    DUAL-FREQUENCY, DIRECT-DRIVE INDUCTIVELY COUPLED PLASMA SOURCE

    公开(公告)号:US20220199365A1

    公开(公告)日:2022-06-23

    申请号:US17606686

    申请日:2020-04-24

    IPC分类号: H01J37/32

    摘要: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

    EDGE RING CENTERING METHOD USING RING DYNAMIC ALIGNMENT DATA

    公开(公告)号:US20180138069A1

    公开(公告)日:2018-05-17

    申请号:US15799011

    申请日:2017-10-31

    IPC分类号: H01L21/68 H01L21/687

    摘要: A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a plurality of first positions of the edge ring on the robot prior to being placed onto the substrate support and determine a plurality of second positions of the edge ring on the robot subsequent to being retrieved from the substrate support. An edge ring position module configured to determine a centered position of the edge ring relative to the substrate support based on offsets between the plurality of first positions and the plurality of second positions.

    SYNCHRONIZATION OF RF GENERATORS
    7.
    发明公开

    公开(公告)号:US20240331976A1

    公开(公告)日:2024-10-03

    申请号:US18740449

    申请日:2024-06-11

    IPC分类号: H01J37/32

    摘要: Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving a digital pulsed signal, the method includes executing the first recipe set and executing the second recipe set. The method further includes outputting a first one of the pulse blocks of the first plurality based on the first recipe set in synchronization with a synchronization signal. The method includes outputting a first one of the pulse blocks of the second plurality based on the second recipe set in synchronization with the synchronization signal.

    ETCHING ISOLATION FEATURES AND DENSE FEATURES WITHIN A SUBSTRATE

    公开(公告)号:US20210358757A1

    公开(公告)日:2021-11-18

    申请号:US17298931

    申请日:2019-11-22

    摘要: Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

    AUXILIARY CIRCUIT IN RF MATCHING NETWORK FOR FREQUENCY TUNING ASSISTED DUAL-LEVEL PULSING

    公开(公告)号:US20180294566A1

    公开(公告)日:2018-10-11

    申请号:US15942629

    申请日:2018-04-02

    IPC分类号: H01Q5/335

    摘要: A radio frequency (RF) matching circuit control system includes an RF matching circuit including a plurality of tunable components. The RF matching circuit is configured to receive an input signal including at least two pulsing levels from an RF generator, provide an output signal to a load based on the input signal, and match an impedance associated with the input signal to impedances of the load. A controller is configured to determine respective impedances of the load for the at least two pulsing levels of the input signal and adjust operating parameters of the plurality of tunable components to align a frequency tuning range of the RF matching circuit with the respective impedances of the load for the at least two pulsing levels to match the impedance associated with the input signal to the respective impedances.

    Etching isolation features and dense features within a substrate

    公开(公告)号:US12119232B2

    公开(公告)日:2024-10-15

    申请号:US17847971

    申请日:2022-06-23

    摘要: Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.