公开(公告)号：US20200299838A1

公开(公告)日：2020-09-24

申请号：US16946009

申请日：2020-06-02

Applicant: Lam Research Corporation

Inventor： Richard Phillips ,  Chloe Baldasseroni ,  Nishanth Manjunath

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/52 ,  G06F17/11 ,  H01L21/02 ,  H01L21/66 ,  H01L21/677

Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.

公开(公告)号：US20190085448A1

公开(公告)日：2019-03-21

申请号：US15785093

申请日：2017-10-16

Applicant: Lam Research Corporation

Inventor： Richard Phillips ,  Chloe Baldasseroni ,  Nishanth Manjunath

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/52 ,  H01L21/02 ,  H01L21/66 ,  G06F17/11

Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.

公开(公告)号：US11286560B2

公开(公告)日：2022-03-29

申请号：US16946009

申请日：2020-06-02

Applicant: Lam Research Corporation

Inventor： Richard Phillips ,  Chloe Baldasseroni ,  Nishanth Manjunath

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/52 ,  G06F17/11 ,  H01L21/02 ,  H01L21/66 ,  H01L21/677

Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.

公开(公告)号：US10697059B2

公开(公告)日：2020-06-30

申请号：US15785093

申请日：2017-10-16

Applicant: Lam Research Corporation

Inventor： Richard Phillips ,  Chloe Baldasseroni ,  Nishanth Manjunath

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/52 ,  G06F17/11 ,  H01L21/02 ,  H01L21/66 ,  H01L21/677

Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.