公开(公告)号：US5298107A

公开(公告)日：1994-03-29

申请号：US843987

申请日：1992-02-27

申请人： Lance A. Scudder ,  Norma Riley ,  Jon M. Schalla

发明人： Lance A. Scudder ,  Norma Riley ,  Jon M. Schalla

IPC分类号： H01L21/205 ,  C23C16/458 ,  C30B25/12

CPC分类号： C23C16/4588 ,  C30B25/12

摘要： A technique for impeding the formation of mechanical bonds between workpieces, such as semiconductor wafers, and a carrier or susceptor on which they are supported during a deposition or layer formation process, such as in epitaxial processing. In the formation of relatively thick films, greater than approximately 50 microns (50 .mu.m) thick, wafers can become mechanically bonded to the susceptor on which they are supported, and are subject to damage caused by thermal stresses during a cooldown phase of processing. In the disclosed method, the speed or direction of rotation of a rotatable susceptor is abruptly changed at least once, or periodically during processing. Slight movement of the wafers with respect to the susceptor during each rotation speed change or reversal tends to break any bonds before they can develop strength, and production yields of acceptable wafers are significantly improved.

摘要翻译： 阻止在诸如半导体晶片的工件之间形成机械结合的技术，以及在沉积或层形成过程（例如外延加工）期间它们被支撑在其上的载体或基座。 在形成相对较厚的膜时，大于约50微米（50（μm））厚的晶片可以机械地结合到它们所支撑的基座上，并且在冷却阶段期间受到热应力的损害 处理。 在所公开的方法中，旋转基座的转速或转动方向突然改变至少一次，或在处理期间周期性地改变。 在每个转速变化或反转期间，晶片相对于基座的轻微运动在它们可以发展强度之前倾向于破坏任何键，并且可接受的晶片的生产率显着提高。